# US 2023/0053528 A1 · Phosphor plate and light emitting device

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- Number: US 2023/0053528 A1
- Document ID: US20230053528A1
- Status: Published application
- Kind: A1
- Application number: 17/796,602
- Filed: 2021-01-28
- Published: 2023-02-23
- Earliest claimed: 2020-02-07
- Assignees: Denka Company Limited
- Applicants: Denka Company Limited
- Inventors: Yuki KUBOTA; Taiyo YAMAURA; Kazuhiro ITO
- Web page: https://patentgrep.com/patent/US20230053528A1

## CPC

- C09K 11/02: Use of particular materials as binders, particle coatings or suspension media therefor
- C04B 35/117: Composites
- C04B 35/14: based on silica
- C04B 35/44: based on aluminates
- C04B 35/443: Magnesium aluminate spinel
- C04B 35/645: Pressure sintering
- C09K 11/64: containing aluminium
- C09K 11/77348: {Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3218: Aluminium (oxy)hydroxides, e.g. boehmite, gibbsite, alumina sol
- C04B 2235/3222: Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
- C04B 2235/3262: Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3869: Aluminium oxynitrides, e.g. AlON, sialon
- C04B 2235/5409: expressed by specific surface values
- C04B 2235/5436: micrometer sized, i.e. from 1 to 100 micron
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/6567: Treatment time
- C04B 2235/666: Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
- C04B 2235/786: Micrometer sized grains, i.e. from 1 to 100 micron
- C04B 2235/9646: Optical properties
- H10H 20/8511: {characterised by their material, e.g. binder}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A phosphor plate includes a plate-like composite including a base material and an α-type sialon phosphor present in the base material, in which, in an X-ray diffraction analysis pattern using a Cu-Kα ray, in a case in which peak intensity corresponding to the α-type sialon phosphor having a diffraction angle 2 θ in a range of 30.2° or more and 30.4° or less is defined as Iα and peak intensity of a peak having a diffraction angle 2 θ in a range of 26.6° or more and 26.8° or less is defined as Iβ, Iα, and Iβ satisfy 0<Iβ/Iα≤10.

## Claims

### Claim 1

A phosphor plate comprising:
a plate-like composite including a base material and an α-type sialon phosphor present in the base material,
wherein, in an X-ray diffraction analysis pattern of the phosphor plate using a Cu-Kα ray, in a case in which peak intensity corresponding to the α-type sialon phosphor having a diffraction angle 2 θ in a range of 30.2° or more and 30.4° or less is defined as Iα and peak intensity of a peak having a diffraction angle 2 θ in a range of 26.6° or more and 26.8° or less is defined as Iβ,Iα and Iβ satisfy 0<Iβ/Iα≤10.

### Claim 2 (depends on 1)

The phosphor plate according to claim 1,
wherein the base material is composed of a sintered material of metal oxide containing at least one of a sintered material of Al2O3, a sintered material of SiO2, and spinel M2xAl4−4x O6−6x(where, M is at least any of Mg, Mn, and Zn, and 0.2<x<0.6).

### Claim 3 (depends on 1)

The phosphor plate according to claim 1,
wherein a content of the α-type sialon phosphor is 5 Vol % or more and 50 Vol % or less in terms of volume in a volume of 100 Vol % of the base material.

### Claim 4 (depends on 1)

The phosphor plate according to claim 1,
wherein an average particle diameter D50 of the α-type sialon phosphor is 1 μm or more and 30 μm or less.

### Claim 5 (depends on 1)

The phosphor plate according to claim 1,
wherein a thickness of the phosphor plate is 50 μm or more and 1 mm or less.

### Claim 6 (depends on 1)

The phosphor plate according to claim 1,
wherein the phosphor plate is used as a wavelength converter that converts radiated blue light into orange light to emit the converted orange light.

### Claim 7 (depends on 1)

The phosphor plate according to claim 1,
wherein a light transmittance in blue light of 455 nm is 10% or less.

### Claim 8 (depends on 1)

The phosphor plate according to claim 1,
wherein the peak having the diffraction angle 2 θ in the range of 26.6° or more and 26.8° or less corresponds to β-type sialon.

### Claim 9 (depends on 1)

A light emitting device comprising:
a group III nitride semiconductor light emitting element; and
the phosphor plate according to claim 1 provided over one surface of the group III nitride semiconductor light emitting element.