# US 2023/0053435 A1 · Conductive bonding material, bonding member including the conductive bonding material, and bonding method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0053435 A1 - Document ID: US20230053435A1 - Status: Published application - Kind: A1 - Application number: 17/796,846 - Filed: 2020-09-28 - Published: 2023-02-23 - Earliest claimed: 2020-02-04 - Assignees: Tanaka Kikinzoku Kogyo K.K. - Applicants: Tanaka Kikinzoku Kogyo K.K. - Inventors: Toshinori OGASHIWA; Kazuo UEDA - Web page: https://patentgrep.com/patent/US20230053435A1 ## CPC - B22F 7/062: {involving the connection or repairing of preformed parts} - B22F 1/05: Metallic powder characterised by the size or surface area of the particles - H01B 1/02: mainly consisting of metals or alloys - H01B 5/00: Non-insulated conductors or conductive bodies characterised by their form - H10W 72/071: {Connecting or disconnecting} - B22F 2998/10: Processes characterised by the sequence of their steps - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A bonding method in which applied is a prescribed conductive bonding material, which contains a molded article of a metal powder. The metal powder is one or more selected from the group consisting of a gold powder, a silver powder, a platinum powder, and a palladium powder, and has a purity of 99.9% by mass or more, and an average particle size of 0.005 µm to 1.0 µm, and the conductive bonding material has a compressive deformation rate M, represented by the following expression, of 5 % or more and 30% or less when compressed with a compression pressure of 5 MPa. [Expression 1] M = {(h1 - h2)/h1} x 100, wherein h1 represents an average thickness of the conductive bonding material before compression, and h2 represents an average thickness of the conductive bonding material after the compression. ## Claims ### Claim 1 A conductive bonding material comprising a molded article of a metal powder, wherein the metal powder is one or more selected from the group consisting of a gold powder, a silver powder, a platinum powder, and a palladium powder, and has a purity of 99.9% by mass or more, and an average particle size of 0.005 µm to 1.0 µm, and the conductive bonding material has a compressive deformation rate M, represented by the following expression, of 5% or more and 30% or less when compressed with a compression pressure of 5 MPa: M= h1- h2 /h1 × 100 wherein h1 represents an average thickness of the conductive bonding material before compression, and h2 represents an average thickness of the conductive bonding material after the compression. ### Claim 2 (depends on 1) A bonding member comprising at least one piece of the conductive bonding material defined in claim 1, comprising: a base material, and one or more metal films formed between the base material and the conductive bonding material, the conductive bonding material being provided on the metal film. ### Claim 3 (depends on 2) The bonding member according to claim 2, comprising a plurality of pieces of the conductive bonding material on the base material, wherein an interval between the plurality of pieces of the conductive bonding material is 1 µm to 10 µm, and each of the pieces of the conductive bonding material has an aspect ratio R, represented by the following expression, of 1 or more and 100 or less, R= X + Y /2 /h1 wherein X represents a length of a short side of each piece of the conductive bonding material in a plane direction of the base material, Y represents a length of a long side of each piece of the conductive bonding material in the plane direction of the base material, and h1 represents an average thickness of the conductive bonding material before compression. ### Claim 4 (depends on 2) A bonding method for bonding a semiconductor chip to a substrate with the bonding member defined in claim 2, comprising the steps of: mounting the conductive bonding material on the semiconductor chip by compression and heating with the semiconductor chip placed on one or more pieces of the conductive bonding material disposed on the bonding member; and bonding the semiconductor chip to the substrate by compression and heating with the semiconductor chip having the conductive bonding material mounted thereon placed on the substrate. ### Claim 5 (depends on 4) The bonding method according to claim 4, wherein in the step of mounting the conductive bonding material on the semiconductor chip, the conductive bonding material is heated at 40° C. or more and 100° C. or less while being compressed at 30 MPa or less. ### Claim 6 (depends on 5) The bonding method according to claim 5, wherein in the step of bonding the semiconductor chip to the substrate, the conductive bonding material is heated at 80° C. or more and 300° C. or less while being compressed at 30 MPa or less. ### Claim 7 (depends on 4) The bonding method according to claim 4, further comprising, after the step of bonding the semiconductor chip to the substrate, a step of sintering the conductive bonding material by heating the conductive bonding material at 100° C. or more and 300° C. or less without compression. ### Claim 8 A bonding method for bonding a semiconductor chip to a substrate with the bonding member defined in claim comprising: a step of mounting the conductive bonding material on the substrate by compression and heating with the substrate placed on the conductive bonding material disposed on the bonding member; and a step of bonding the semiconductor chip to the substrate by compression and heating with the semiconductor chip placed on the metal film disposed on the conductive bonding material mounted on the substrate. ### Claim 9 (depends on 8) The bonding method according to claim 8, wherein in the step of mounting the conductive bonding material on the substrate, the conductive bonding material is heated at 40° C. or more and 100° C. or less while being compressed at 30 MPa or less. ### Claim 10 (depends on 9) The bonding method according to claim 9, wherein in the step of bonding the semiconductor chip to the substrate, the conductive bonding material is heated at 80° C. or more and 300° C. or less, and compressed at 30 MPa or less. ### Claim 11 (depends on 8) The bonding method according to claim 8, further comprising, after the step of bonding the semiconductor chip to the substrate, a step of sintering the conductive bonding material by heating the conductive bonding material at 100° C. or more and 300° C. or less without compression. ### Claim 12 (depends on 3) A bonding method for bonding a semiconductor chip to a substrate with the bonding member defined in claim 3, comprising the steps of: mounting the conductive bonding material on the semiconductor chip by compression and heating with the semiconductor chip placed on one or more pieces of the conductive bonding material disposed on the bonding member; and bonding the semiconductor chip to the substrate by compression and heating with the semiconductor chip having the conductive bonding material mounted thereon placed on the substrate. ### Claim 13 (depends on 5) The bonding method according to claim 5, further comprising, after the step of bonding the semiconductor chip to the substrate, a step of sintering the conductive bonding material by heating the conductive bonding material at 100° C. or more and 300° C. or less without compression. ### Claim 14 (depends on 6) The bonding method according to claim 6, further comprising, after the step of bonding the semiconductor chip to the substrate, a step of sintering the conductive bonding material by heating the conductive bonding material at 100° C. or more and 300° C. or less without compression. ### Claim 15 (depends on 3) A bonding method for bonding a semiconductor chip to a substrate with the bonding member defined in claim 3, comprising: a step of mounting the conductive bonding material on the substrate by compression and heating with the substrate placed on the conductive bonding material disposed on the bonding member; and a step of bonding the semiconductor chip to the substrate by compression and heating with the semiconductor chip placed on the metal film disposed on the conductive bonding material mounted on the substrate. ### Claim 16 (depends on 9) The bonding method according to claim 9, further comprising, after the step of bonding the semiconductor chip to the substrate, a step of sintering the conductive bonding material by heating the conductive bonding material at 100° C. or more and 300° C. or less without compression. ### Claim 17 (depends on 10) The bonding method according to claim 10, further comprising, after the step of bonding the semiconductor chip to the substrate, a step of sintering the conductive bonding material by heating the conductive bonding material at 100° C. or more and 300° C. or less without compression.