Monocrystalline nickel-titanium films on single crystal silicon substrates using seed layers
AssigneeArizona Board of Regents on behalf of Arizona State University
InventorsJagannathan Rajagopalan, Rohit Berlia
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Abstract
A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.
Claims20
A method of forming a monocrystalline nitinol film on a single crystal silicon wafer, comprising:
- depositing a first seed layer of a first metal on the single crystal silicon wafer, with the first seed layer growing epitaxially on the single crystal silicon wafer;
- and
- depositing the monocrystalline nitinol film on a final seed layer, with the monocrystalline nitinol film growing epitaxially on the final seed layer.
A multilayer stack, comprising:
- a single crystal silicon wafer;
- a first seed layer;
- and
- a monocrystalline nitinol film, the first seed layer disposed between the single crystal silicon wafer and the monocrystalline nitinol film.
A micro-electromechanical system (MEMS) device, comprising:
- a single crystal silicon wafer;
- and
- a monocrystalline nitinol film coupled to the single crystal silicon wafer.
Dependencies are inferred from the claim text.