Wide gap semiconductor device and method for manufacturing wide gap semiconductor device
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorsYusuke MAEYAMA, Shunichi NAKAMURA, Jin ONUKI
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Abstract
A wide gap semiconductor device has: a wide gap semiconductor layer; and a metal layer 20 provided on the wide gap semiconductor layer. The metal layer 20 has a single crystal layer 21 in an interface region at an interface with the wide gap semiconductor layer. When it is assumed that a lattice constant, in an equilibrium state, of a metal constituting the metal layer 20 is L, the single crystal layer 21 in the interface region includes a first region in which a lattice constant L1 is smaller than L by 1.5% to 8%.
Claims8
A wide gap semiconductor device comprising:
- a wide gap semiconductor layer;
- and
- a metal layer provided on the wide gap semiconductor layer,
- wherein the metal layer has a single crystal layer in an interface region at an interface with the wide gap semiconductor layer,
- when it is assumed that a lattice constant, in an equilibrium state, of a metal constituting the metal layer is L, the single crystal layer in the interface region includes a first region in which a lattice constant L1 is smaller than L by 1.5% to 8%.
A method for manufacturing wide gap semiconductor device comprising steps of
- depositing a Ti layer on a wide gap semiconductor layer;
- and
- heating the Ti layer at 400° C. or lower,
- wherein the Ti layer has the single crystal layer in an interface region at an interface between the wide gap semiconductor layer and the Ti layer.
Dependencies are inferred from the claim text.