US 2023/0038439 A1 · ION IMPLANTER AND MODEL GENERATION METHOD

Abstract

An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.

Claims13

Dependent claims

An ion implanter comprising:

a beam generator configured to generate an ion beam, based on an implantation recipe;
a plurality of measurement devices that measure a beam current of the ion beam;
and
a controller configured to:
acquire a data set including a plurality of measurement values indicating the beam current of the ion beam and an implantation parameter in the implantation recipe;
and
evaluate measurement validity of the beam current of the ion beam by using the model;
wherein:
the implantation parameter comprises one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose;
and
the model is built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/973,130Filed 25 Oct 2022

Priority

JP 2020-0365464 Mar 2020

Published

9 Feb 2023

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H01J 37/3171
For changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation: for ion implantation
H01J 37/304
Electron-beam or ion-beam tubes for localised treatment of objects: controlling tubes by information coming from the objects or from the beam,…
H01J 2237/24514
Intensity, dose or other characteristics of particle beams or electromagnetic radiation: beam diagnostics including control of the parameter or…
H01J 2237/30416
Details: handling of data

Ion implanter and model generation method

Life of this patent

Ion implanter and model generation method

Life of this patent

Abstract

Claims13