Gate-Controlled Charge Modulated Device for CMOS Image Sensors

A device for sensing light, the device comprising:

• a first semiconductor region doped with a dopant of a first type;
• a second semiconductor region doped with a dopant of a second type, wherein:
• the second semiconductor region is positioned above the first semiconductor region;
• and
• the first type is distinct from the second type;
• a gate insulation layer positioned above the second semiconductor region;
• a gate positioned above the gate insulation layer;
• a source electrically coupled with the second semiconductor region;
• and
• a drain electrically coupled with the second semiconductor region, wherein:
• the second semiconductor region has a top surface that is positioned toward the gate insulation layer;
• the second semiconductor region has a bottom surface that is positioned opposite to the top surface of the second semiconductor region;
• the second semiconductor region has an upper portion that includes the top surface of the second semiconductor region;
• the second semiconductor region has a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion;
• the upper portion of the second semiconductor region extends from the source to the drain;
• the lower portion of the second semiconductor region extends from the source to the drain;
• the first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region;
• and
• the first semiconductor region is in contact with the upper portion of the second semiconductor region at least at a location positioned under the gate.