Thin-film deposition method and semiconductor device
AssigneeChangxin Memory Technologies, Inc.
InventorsMengmeng YANG, Xiaoling WANG
Life of this patent
Estimating the term…
Abstract
The present application discloses a thin-film deposition method and a semiconductor device. The thin-film deposition method in the present application includes: providing a substrate; performing thin-film deposition on the substrate by using a thin-film deposition technology to form a first deposited layer; introducing a purge gas to perform impurity purge treatment on the first deposited layer to form a purified deposited layer; and forming a thin-film layer by the purified deposited layer. In the thin-film deposition method of the present application, the thin-film deposition technology is adopted to form the deposited layer, and impurity purge treatment is performed on the deposited layer.
Claims20
A thin-film deposition method, comprising:
- step S1:
- providing a substrate;
- step S2:
- performing thin-film deposition on the substrate by using a thin-film deposition technology, and forming a first deposited layer when the thin-film deposition reaches a first predetermined condition;
- step S3:
- introducing a purge gas to perform impurity purge treatment on the first deposited layer, to form a purified deposited layer;
- step S4:
- repeatedly performing step S2 to step S3 for N times, to form N+1 purified deposited layers, wherein N is an integer greater than or equal to 0;
- and
- step S5:
- forming a thin-film layer by the N+1 purified deposited layers.
Dependencies are inferred from the claim text.