Continuous-feed chemical vapor deposition system

A chemical vapor deposition method comprising:

• providing a first chamber configured to receive a substrate;
• providing a second chamber downstream from the first chamber, wherein the second chamber is configured to receive the substrate from the first chamber, and wherein, in an operational state, a chemical vapor deposition process is performed on the substrate within the second chamber;
• and
• providing a third chamber downstream from the second chamber, wherein the third chamber is configured to receive the substrate from the second chamber upon completion of the chemical vapor deposition process within the second chamber,
• wherein the second chamber is configured to be environmentally isolated from the first chamber and the third chamber when in the operational state, and
• wherein, in the operational state, the first chamber is configured to receive a subsequent substrate in preparation for a subsequent chemical vapor deposition process to be performed on the subsequent substrate.

A chamber for conducting chemical vapor deposition, the chamber comprising:

• a heating enclosure configured to maintain a substrate at a predefined temperature for conducting a chemical vapor deposition process within the chamber, wherein the heating enclosure comprises a cylindrical body having a first end and a second end;
• a first valve proximate the first end of the cylindrical body, wherein the substrate is received within the cylindrical body via the first valve and wherein the first valve is configured to environmentally isolate the chamber when in an operational state during which the chemical vapor deposition process is performed on the substrate;
• a second valve proximate the second end of the cylindrical body, wherein the substrate is discharged from the chamber via the second valve and wherein the second valve is configured to environmentally isolate the chamber when in the operational state;
• and
• a first tubular connector and a second tubular connector, the first tubular connector engaged with the first valve and the first opening of the cylindrical body and extending between the first valve and the first opening, the second tubular connector engaged with the second opening of the cylindrical body and the second valve and extending between the second opening and the second valve,
• wherein the first tubular connector and the second tubular connector mechanically isolate the cylindrical body from the first valve and the second valve.

A heating enclosure for conducting chemical vapor deposition, the heating enclosure comprising:

• a cylindrical body having a first end and a second end, wherein the cylindrical body is configured to receive a substrate;
• a first plurality of heating elements disposed around an outer surface of the cylindrical body and extending along an axial direction of the cylindrical body from the first end of the cylindrical body toward the second end of the cylindrical body, wherein a first length of the each of the first plurality of heating elements is less than half a length of the cylindrical body;
• a second plurality of heating elements disposed around the outer surface of the cylindrical body and extending along an axial direction of the cylindrical body from the first end of the cylindrical body to the second end of the cylindrical body;
• and
• a third plurality of heating elements disposed around the outer surface of the cylindrical body and extending along an axial direction of the cylindrical body from the second end of the cylindrical body toward the first end of the cylindrical body, wherein a second length of each of the third plurality of heating elements is less than half the length of the cylindrical body,
• wherein the first plurality of heating elements, the second plurality of heating elements, and the third plurality of heating elements are configured to maintain a first temperature within the cylindrical body.

A chemical vapor deposition system comprising:

• a first chamber configured to receive a substrate;
• and
• a second chamber downstream from the first chamber, wherein the second chamber is configured to receive the substrate from the first chamber, and wherein, in an operational state, a chemical vapor deposition process is performed on the substrate within the second chamber;
• wherein the second chamber is configured to be environmentally isolated from the first chamber when in the operational state, and
• wherein the first chamber is configured to receive the substrate from the second chamber upon completion of the chemical vapor deposition process within the second chamber.