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US 2022/0389583 A1Published application
Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
AssigneeASM IP Holding B.V.
InventorsKatja Väyrynen, Timo Hatanpää, Anton Vihervaara, Mikko Ritala, Markku Leskelä
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Abstract
A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.
Claims20
A cyclic deposition process for forming a metal-containing material, the cyclic deposition process comprising:
- providing a first gas-phase precursor from a first gas-phase reactant source vessel in fluid communication with a reaction chamber to the reaction chamber to form a first metal species, the first gas-phase precursor comprising a metal compound having a formula:
- (adduct)n-M-Xa, where each adduct is an adduct forming ligand, where M is a first metal comprising a group 3-group 12 metal, where n is from 1 to 4, where X is a halide or other ligand and where a is from 1 to 4;
- and
- providing a second gas-phase reactant comprising a compound having a general formula of R-M-H, wherein R is an organic group and M is a second metal, to react with the first metal species to thereby form the metal-containing material.
1 more element
A reactor system comprising:
- a reaction chamber;
- a gas distribution system;
- a first gas-phase reactant source coupled to the gas distribution system, the first gas-phase reactant source comprising first vessel and a first gas-phase reactant comprising a metal compound having a formula:
- (adduct)n-M-Xa, where each adduct is an adduct forming ligand, where M is a first metal comprising a group 3 to group 12 metal, where n is from 1 to 4, where X is a halide or other ligand and where a is from 1 to 4;
- a second gas-phase reactant source coupled to the gas distribution system, the second gas-phase reactant source comprising a second vessel and s second gas-phase reactant comprising a compound having a general formula of R-M-H, wherein R is an organic group and M is a second metal;
- an exhaust source;
- and
- a system operation and control mechanism to:
- provide the first gas-phase reactant to the reaction chamber to react with a surface of a substrate to form a first metal species;
- and
- provide the second gas-phase reactant to the reaction chamber to react with the first metal species to thereby form a metal-containing material.
8 more elements
Dependencies are inferred from the claim text.