Magnetic Memory Element Incorporating Dual Perpendicular Enhancement Layers

A magnetic memory element comprising:

• a magnetic free layer structure including:
• first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof, said first and second magnetic free layers each comprising cobalt and iron;
• and
• a first perpendicular enhancement layer (PEL) interposed between said first and second magnetic free layers;
• an insulating tunnel junction layer formed adjacent to said first magnetic free layer opposite said first PEL;
• a magnetic reference layer structure including:
• first, second, and third magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof, said first magnetic reference layer comprising cobalt and iron and formed adjacent to said insulating tunnel junction layer opposite said first magnetic free layer;
• a second PEL interposed between said first and second magnetic reference layers and comprising any one of magnesium, tantalum, molybdenum, or tungsten;
• and
• a third PEL interposed between said second and third magnetic reference layers and comprising any one of magnesium, tantalum, molybdenum, or tungsten;
• an anti-ferromagnetic coupling layer formed adjacent to said third magnetic reference layer opposite said third PEL;
• and
• a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said third magnetic reference layer, said magnetic fixed layer having a second invariable magnetization direction substantially opposite to said first invariable magnetization direction.