Method for Manufacturing Silicon Nitride Substrate
AssigneeOci Company Ltd.
InventorsSeung Yeon Lee, Seunggwan Lee, Eun Ok Chi
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Abstract
The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and the protrusions extend in parallel to each other in one direction.
Claims12
A method for manufacturing a silicon nitride substrate, comprising:
- forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent;
- molding the slurry to form sheets;
- forming a stacked structure by sandwiching at least one of the sheets between a lower plate and an upper plate;
- performing degreasing process on the stacked structure;
- and
- performing sintering process on the stacked structure,
- wherein at least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and
- the protrusions extend in parallel to each other in one direction.
Dependencies are inferred from the claim text.