Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHING-KAI SHEN, JUNG-KUO TU, WEI-CHENG SHEN, YI-CHUAN TENG
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Abstract
A semiconductor structure includes a substrate, a MEMS substrate, a dielectric structure between the substrate and the MEMS substrate, a cavity in the dielectric structure, an electrode over the substrate, and a protrusion disposed in the cavity. The MEMS substrate includes a movable membrane, and the cavity is sealed by the movable membrane. A height of the protrusion is less than a depth of the cavity.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a microelectromechanical system (MEMS) substrate over the substrate, wherein the MEMS substrate comprises a movable membrane;
- a dielectric structure between the substrate and the MEMS substrate;
- a cavity in the dielectric structure, wherein the cavity is sealed by the movable membrane;
- an electrode over the substrate;
- and
- a protrusion disposed in the cavity;
- wherein a height of the protrusion is less than a depth of the cavity.
A method for forming a semiconductor structure, comprising:
- forming an interconnect structure over a substrate, wherein the interconnect structure comprises a top conductive layer;
- forming a dielectric structure over the interconnect structure;
- patterning the dielectric structure to simultaneously form a cavity and a protrusion in the cavity;
- and
- bonding a MEMS substrate to the dielectric structure to seal the cavity,
- wherein the protrusion is separated from the MEMS substrate.
A method for forming a semiconductor structure, comprising:
- forming an interconnect structure over a substrate;
- forming a dielectric structure over the interconnect structure;
- patterning the dielectric structure to simultaneously form a cavity and a protrusion in the cavity;
- forming a conductive layer over the protrusion;
- forming a dielectric layer to cover the conductive layer;
- and
- bonding a MEMS substrate to the dielectric structure to seal the cavity,
- wherein protrusion, the conductive layer and the dielectric layer are separated from the MEMS substrate.
Dependencies are inferred from the claim text.