Back to results
US 2022/0311201 A1Published application
Waveguide amplifier
AssigneeAalto University Foundation sr
InventorsZhipei Sun, John Rönn
Life of this patent
Estimating the term…
Abstract
The present invention concerns a waveguide amplifier and a waveguide amplifier device comprising it. In addition, the invention concerns a method for producing such waveguide amplifier. The invention especially relates to erbium doped waveguide amplifiers having a controlled doping concentration.
Claims22
A strip waveguide amplifier comprising:
- a silicon substrate;
- an optical quality silicon dioxide (silica) layer formed on the substrate;
- a silicon nitride layer formed on the silica layer;
- and
- an erbium-doped aluminum oxide layer on the silica and the silicon nitride layers,
- wherein the erbium-doped aluminum oxide layer is deposited by atomic layer deposition (ALD).
3 more elements
(canceled)
(canceled)
A method for producing a strip waveguide amplifier comprising:
- providing a silicon substrate;
- depositing silicon dioxide on the silicon substrate to form a silica layer thereon;
- depositing silicon nitride layer on the silica layer;
- and
- coating the silica layer and the silicon nitride layer with an erbium-doped aluminum oxide layer deposited by atomic layer deposition (ALD).
2 more elements
A waveguide amplifier comprising
- a silicon substrate;
- an optical quality silicon dioxide (silica) layer formed on the substrate;
- a silicon nitride layer formed on the silica layer;
- and
- a rare-earth material-doped aluminum oxide layer on the silica and the silicon nitride layers,
- wherein the rare-earth material doped aluminum oxide layer is deposited by atomic layer deposition (ALD),
- wherein the doping concentration of the rare-earth material is progressively decreased perpendicularly to the surface plane of the silicon substrate.
4 more elements
A method for producing waveguide amplifier comprising:
- providing a silicon substrate;
- depositing silicon dioxide on the silicon substrate to form a silica layer thereon;
- depositing silicon nitride layer on the silica layer;
- and
- coating the silica layer and the silicon nitride layer with a rare-earth material-doped aluminum oxide layer deposited by atomic layer deposition (ALD),
- wherein the doping concentration of the rare-earth material is progressively decreased perpendicularly to the plane of the substrate when moving away from the substrate.
3 more elements
Dependencies are inferred from the claim text.