Quantum dot device, film having multilayered structure, and electronic device

A method of manufacturing a quantum dot device, comprising

• coating a first composition comprising a perovskite compound represented by Chemical Formula 1 on a first electrode and then annealing to form a first hole transport layer,
• coating a second composition comprising a perovskite compound represented by Chemical Formula 2′ on the first hole transport layer, and then annealing to form a second hole transport layer,
• forming a quantum dot layer on the second hole transport layer, and
• forming a second electrode on the quantum dot layer to manufacture the quantum dot device,
• AMX3 Chemical Formula 1
• wherein, in Chemical Formula 1,
• A is an ammonium cation having a C1 or C2 alkyl group, an ammonium cation having a C1 or C2 haloalkyl group, an ammonium cation having a C1 or C2 cyanoalkyl group, an ammonium cation having a C1 or C2 alkoxy group, a formamidinium cation, a halogen-substituted formamidinium cation, an alkali metal ion, or a combination thereof,
• M is a transition metal, a rare earth metal, or a combination thereof, and
• X is a halide ion, a combination of two or more different halide ions, CNS−, PF6−, or BF4−,
• A′X′ Chemical Formula 2′
• wherein, in Chemical Formula 2′,
• A′ is an organic ammonium cation, an organic amidinium cation, an organic phosphonium cation, an organic sulfonium cation, or a derivative thereof, wherein the organic ammonium cation, the organic phosphonium cation, or the organic sulfonium cation comprises a substituted or unsubstituted C3 to C30 alkyl group, a substituted or unsubstituted C3 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group, and
• X′ is a halide ion.