# US 2022/0285818 A1 · Quantum transducers with embedded optical resonators

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- Number: US 2022/0285818 A1
- Document ID: US20220285818A1
- Status: Published application
- Kind: A1
- Application number: 17/191,275
- Filed: 2021-03-03
- Published: 2022-09-08
- Earliest claimed: 2021-03-03
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Abram L. Falk; Chi Xiong; Swetha Kamlapurkar; Hanhee Paik; Jason S. Orcutt
- Web page: https://patentgrep.com/patent/US20220285818A1

## CPC

- H01P 7/00: Resonators of the waveguide type
- H01P 7/08: Strip line resonators
- G02B 6/131: {by using epitaxial growth (epitaxial growth for semiconductors H10P14/20)}
- H01P 11/008: {Manufacturing resonators}
- H10N 69/00: Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
- G02B 2006/1204: {Lithium niobate (LiNbO3)}
- G02F 1/035: in an optical waveguide structure
- G06N 10/40: Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
- H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS

## Abstract

Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a superconducting microwave resonator having a microstrip architecture that includes a dielectric layer positioned between a superconducting waveguide and a ground plane. The apparatus can also include an optical resonator positioned within the dielectric layer.

## Claims

### Claim 1

An apparatus comprising:
a superconducting microwave resonator having a microstrip architecture that includes a dielectric substrate positioned between a superconducting waveguide and a ground plane; and
an optical resonator positioned within the dielectric substrate.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the superconducting waveguide and the ground plane comprise at least one element selected from the group consisting of niobium, niobium nitride, and titanium nitride.

### Claim 3 (depends on 2)

The apparatus of claim 2, wherein the dielectric substrate comprises at least one element selected from the group consisting of silicon, sapphire, and garnet.

### Claim 4 (depends on 3)

The apparatus of claim 3, wherein the optical resonator includes an optical waveguide that comprises at least one material selected from the group consisting of silicon germanium, lithium niobate, and aluminum nitride.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein the dielectric substrate is positioned between the superconducting waveguide and the optical resonator, and wherein the dielectric substrate is further positioned between the ground plane and the optical resonator.

### Claim 6 (depends on 1)

The apparatus of claim 1, further comprising a second ground plane that is co-planer with the superconducting waveguide and positioned on the dielectric substrate.

### Claim 7 (depends on 6)

The apparatus of claim 6, wherein the second ground plane comprises at least one element selected from the group consisting of niobium, niobium nitride, and titanium nitride.

### Claim 8 (depends on 6)

The apparatus of claim 6, wherein the dielectric substrate extends from the ground plane to the superconducting waveguide along a direction, and wherein a position of the optical resonator within the dielectric substrate is offset from a position of the superconducting waveguide on the dielectric substrate along the direction.

### Claim 9

An apparatus, comprising:
a superconducting microwave resonator having a twinstrip architecture that includes a dielectric substrate positioned between a first superconducting waveguide and a second superconducting waveguide; and
an optical resonator positioned within the dielectric substrate.

### Claim 10 (depends on 9)

The apparatus of claim 9, wherein the first superconducting waveguide and the second superconducting waveguide comprise at least one element selected from the group consisting of niobium, niobium nitride, and titanium nitride.

### Claim 11 (depends on 10)

The apparatus of claim 10, wherein the dielectric substrate comprises at least one element selected from the group consisting of silicon, sapphire, and garnet.

### Claim 12 (depends on 11)

The apparatus of claim 11, wherein the optical resonator includes an optical waveguide that comprises at least one material selected from the group consisting of silicon germanium, lithium niobate, and aluminum nitride.

### Claim 13 (depends on 12)

The apparatus of claim 12, wherein the dielectric substrate is positioned between the first superconducting waveguide and the optical resonator and between the second superconducting waveguide and the optical resonator.

### Claim 14

A method, comprising:
forming an optical resonator on a dielectric substrate;
extending the dielectric substrate by depositing a dielectric cladding layer onto the dielectric substrate and the optical resonator; and
forming a superconducting waveguide by depositing a first superconducting material onto the dielectric substrate, wherein at least a portion of the dielectric substrate is positioned between the superconducting waveguide and the optical resonator.

### Claim 15 (depends on 14)

The method of claim 14, further comprising:
depositing a second superconducting material onto the dielectric substrate, wherein the depositing forms a member selected from the group of a ground plane and a second superconducting waveguide.

### Claim 16 (depends on 15)

The method of claim 15, wherein the dielectric substrate is a device layer of a silicon on insulator wafer that includes a first silicon handle layer, an insulator layer, and the device layer, and the method further comprises:
forming a second silicon handle layer on the second superconducting material.

### Claim 17 (depends on 16)

The method of claim 16, further comprising:
removing the first silicon handle layer and the insulator layer from the dielectric substrate subsequent to depositing the second superconducting material and prior to forming the superconducting waveguide.

### Claim 18 (depends on 17)

The method of claim 17, further comprising:
forming a second ground plane that is coplanar with the superconducting waveguide by depositing a third superconducting material onto the dielectric substrate.

### Claim 19 (depends on 18)

The method of claim 18, wherein the first superconducting material, the second superconducting material, and the third superconducting material comprise at least one element from the group consisting of niobium, niobium nitride, and titanium nitride.

### Claim 20 (depends on 19)

The method of claim 19, wherein the forming the optical resonator comprises growing metal track on the dielectric substrate via an epitaxial growth process prior to depositing the dielectric cladding layer.
