# US 2022/0285584 A1 · Indium-gallium-nitride light emitting diodes with light reflecting mirrors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0285584 A1 - Document ID: US20220285584A1 - Status: Published application - Kind: A1 - Application number: 17/195,271 - Filed: 2021-03-08 - Published: 2022-09-08 - Earliest claimed: 2021-03-08 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Michel Khoury; Lan Yu; Michael Chudzik; Max Batres - Web page: https://patentgrep.com/patent/US20220285584A1 ## CPC - H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping} - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/01: Manufacture or treatment - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/855: Optical field-shaping means, e.g. lenses - H10H 29/012: {of active-matrix LED displays} - H10H 29/034: {of coatings} - H10H 29/30: Active-matrix LED displays - H10H 29/8421: {Reflective coatings, e.g. dielectric Bragg reflectors} - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal. ## Claims ### Claim 1 A semiconductor processing method comprising: forming subpixels on a substrate, wherein each of the subpixels comprises: a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer on the substrate; a porosified region formed on or in the gallium-and-nitrogen-containing region; and an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material; forming a first reflection layer around one of the subpixels, wherein the first reflection layer comprises a first metal; and forming a second reflection layer around another of the subpixels, wherein the second reflection layer comprises a second metal that is different than the first metal. ### Claim 2 (depends on 1) The semiconductor processing method of claim 1, wherein the method further comprises forming a third reflection layer around still another of the subpixels, wherein the third reflection layer comprises the first metal. ### Claim 3 (depends on 1) The semiconductor processing method of claim 1, wherein the method further comprises removing the substrate from the subpixels. ### Claim 4 (depends on 1) The semiconductor processing method of claim 1, wherein the method further comprises forming optical structures on the subpixels, wherein the optical structures are formed on each of the subpixels on an opposite side of the gallium-and-nitrogen-containing region than the active region. ### Claim 5 (depends on 4) The semiconductor processing method of claim 4, wherein the optical structures are formed opposite the gallium-and-nitrogen-containing region on the nucleation layer. ### Claim 6 (depends on 1) The semiconductor processing method of claim 1, wherein the first reflection layer is formed on a blue-light-emitting-subpixel characterized by a peak light emission wavelength of less than or about 500 nm, and the second reflection layer is formed on a red-light-emitting-subpixel characterized by a peak light emission wavelength of greater than or about 600 nm. ### Claim 7 (depends on 1) The semiconductor processing method of claim 1, wherein the first metal comprises aluminum. ### Claim 8 (depends on 1) The semiconductor processing method of claim 1, wherein the second metal comprises copper. ### Claim 9 A semiconductor processing method comprising: forming a gallium-and-nitrogen-containing region on a nucleation layer on a substrate; planarizing the gallium-and-nitrogen-containing region to form a planar portion of the gallium-and-nitrogen-containing region; forming a porosified region in or on the planar portion of the gallium-and-nitrogen-containing region; forming an active region on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material, and is characterized by a peak light emission wavelength greater than or about 400 nm; and forming a reflection layer on the active region, wherein the reflection layer comprises a metal. ### Claim 10 (depends on 9) The semiconductor processing method of claim 9, wherein the gallium-and-nitrogen-containing layer is formed by selective area growth on an exposed portion of the nucleation layer exposed through a patterned mask layer formed on the nucleation layer. ### Claim 11 (depends on 9) The semiconductor processing method of claim 9, wherein the planarizing of the gallium-and-nitrogen containing region comprises annealing the gallium-and-nitrogen containing region to sublimate a portion of the region opposite the nucleation layer and to form the planar portion of the gallium-and-nitrogen-containing region. ### Claim 12 (depends on 9) The semiconductor processing method of claim 9, wherein the porosified region is formed by electrochemically etching an n-doped portion of the gallium-and-nitrogen-containing region or by electrochemically etching an n-doped layer formed on the gallium-and-nitrogen-containing region. ### Claim 13 (depends on 9) The semiconductor processing method of claim 9, wherein the active region is characterized by a peak light emission wavelength of less than 600 nm, and the metal in the reflection layer comprises aluminum. ### Claim 14 (depends on 9) The semiconductor processing method of claim 9, wherein the active region is characterized by a peak light emission wavelength of greater than 600 nm, and the metal in the reflection layer comprises copper. ### Claim 15 A semiconductor structure comprising: one or more subpixels, wherein each of the subpixels comprises: a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer; a porosified region formed on or in the gallium-and-nitrogen-containing region; an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material; and a reflection layer formed on the active region and the gallium-and-nitrogen-containing region, wherein the reflection layer comprises a metal. ### Claim 16 (depends on 15) The semiconductor structure of claim 15, wherein the gallium-and-nitrogen-containing region comprises a GaN material characterized by less than or about 15 mol. % indium. ### Claim 17 (depends on 15) The semiconductor structure of claim 15, wherein the nucleation layer comprises at least one nitride material selected from the group consisting of AlN, NbN, TiN, and HfN. ### Claim 18 (depends on 15) The semiconductor structure of claim 15, wherein the one or more subpixels comprise a first subpixel and a second subpixel, wherein: the metal in the reflection layer of the first subpixel comprises a first metal, and the metal in the reflection layer of the second subpixel comprises a second metal that is different than the first metal. ### Claim 19 (depends on 18) The semiconductor structure of claim 18, wherein: the first subpixel is characterized by a first peak light emission wavelength of less than or about 600 nm, and the first metal comprises aluminum, and the second subpixel is characterized by a second peak light emission wavelength of greater than 600 nm, and the second metal comprises copper. ### Claim 20 (depends on 18) The semiconductor structure of claim 18, wherein the one or more subpixels comprise a third subpixel characterized by third peak light emission wavelength of less than or about 600 nm, and wherein the metal in the reflection layer of the third subpixel is the same as the first metal.