# US 2022/0285408 A1 · Isolation structure of a photoresist stripper, tft arrays and preparation method thereof

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- Number: US 2022/0285408 A1
- Document ID: US20220285408A1
- Status: Published application
- Kind: A1
- Application number: 17/280,098
- Filed: 2019-11-26
- Published: 2022-09-08
- Earliest claimed: 2019-11-26
- Assignees: Chongqing Konka Photoelectric Technology Research Institute Co., Ltd.
- Applicants: Chongqing Konka Photoelectric Technology Research Institute Co., Ltd.
- Inventors: Liu Chung Lee; Tzu Ping Lin
- Web page: https://patentgrep.com/patent/US20220285408A1

## CPC

- H10D 86/021: {of multiple TFTs}
- H10P 95/08: {Planarisation of organic insulating materials}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 14/6319: {Formation by plasma treatments, e.g. plasma oxidation of the substrate}
- H10P 50/287: {by chemical means}
- H10P 50/286: {of organic materials}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed are an isolation structure of a photoresist stripper, a TFT array, and preparation methods thereof. The isolation structure includes a protective layer and a hardened layer arranged on the protective layer. The hardened layer is formed by plasma bombarding the protective layer with gas(es) and is configured to insulate the photoresist stripper. By forming the hardened layer on the surface of the protective layer including the organic planar layer, the hardened layer can prevent chemical agents (such as photoresist stripper) adopted in the subsequent process from getting into the protective layer, so as to keep the photoresist stripper from the protective layer, protecting the protective layer.

## Claims

### Claim 1

An isolation structure of a photoresist stripper, comprising: a protective layer, and a hardened layer arranged on the protective layer; the hardened layer being formed by plasma bombarding the protective layer with a gas and being configured for insulating the photoresist stripper.

### Claim 2 (depends on 1)

The isolation structure of the photoresist stripper according to claim 1, wherein the gas comprises one or more of Ar, N2, and BCl3.

### Claim 3 (depends on 1)

The isolation structure of the photoresist stripper according to claim 1, wherein the protective layer includes an organic planar layer.

### Claim 4 (depends on 3)

The isolation structure of the photoresist stripper according to claim 3, wherein the isolation structure further comprises: an electrode arranged under the organic planar layer.

### Claim 5 (depends on 4)

The isolation structure of the photoresist stripper according to claim 4, wherein the isolation structure further comprises: an ITO layer arranged on the hardening layer and a photoresist layer arranged on the ITO layer.

### Claim 6 (depends on 1)

The isolation structure of the photoresist stripper according to claim 1, wherein the parameters of the plasma bombardment include: a temperature of 20-30° C.; a pressure of 10-30 mT; a bombardment time of 10-20 s; and a power density of 2000-3000 w/cm2.

### Claim 7 (depends on 1)

The isolation structure of the photoresist stripper according to claim 1, wherein the photoresist stripper comprises dimethyl sulfoxide and ethanolamine.

### Claim 8

A method for preparing an isolation structure of a photoresist stripper, wherein the method for preparing the isolation structure comprises the following steps:
providing a protective layer; and
plasma bombarding the protective layer with a gas and forming a hardened layer on the protective layer to obtain the isolation structure of the photoresist stripper, the hardened layer being configured to insulate the photoresist stripper.

### Claim 9 (depends on 8)

The method for preparing the isolation structure of the photoresist stripper according to claim 8, wherein the gas comprises one or more of Ar, N2, and BCl3.

### Claim 10 (depends on 8)

The method for preparing the isolation structure of the photoresist stripper according to claim 8, wherein the protective layer includes an organic planar layer.

### Claim 11 (depends on 8)

The method for preparing the isolation structure of the photoresist stripper according to claim 8, wherein the parameters of the plasma bombardment include: a temperature of 20-30° C.; a pressure of 10-30 mT; a bombardment time of 10-20 s; and a power density of 2000-3000 w/cm2.

### Claim 12 (depends on 8)

The method for preparing the isolation structure of the photoresist stripper according to claim 8, wherein the photoresist stripper includes dimethyl sulfoxide and ethanolamine.

### Claim 13 (depends on 8)

A method for preparing a TFT array, wherein the method for preparing a TFT array comprises the following steps:
providing a substrate;
preparing an electrode on the substrate;
preparing a protective layer on the electrode, the protective layer being an organic planar layer; and
preparing a hardened layer on the organic planar layer by adopting the method for preparing the isolation structure of the photoresist stripper according to claim 8.

### Claim 14 (depends on 13)

The method for preparing the TFT array according to claim 13, wherein the method for preparing the TFT array further comprises the following steps:
preparing an ITO layer on the hardened layer;
preparing a photoresist layer on the ITO layer and performing photolithography processing; and
performing stripping processing on the photoresist layer by using the photoresist stripper.