# US 2022/0285402 A1 · Method of producing a semiconductor component and semiconductor component

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- Number: US 2022/0285402 A1
- Document ID: US20220285402A1
- Status: Published application
- Kind: A1
- Application number: 17/678,580
- Filed: 2022-02-23
- Published: 2022-09-08
- Earliest claimed: 2021-03-08
- Assignees: Infineon Technologies Dresden GmbH
- Applicants: Infineon Technologies Dresden GmbH & Co. KG
- Inventors: Dirk Meinhold; Steffen Bieselt
- Web page: https://patentgrep.com/patent/US20220285402A1

## CPC

- B81C 1/00182: {Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer}
- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- B81C 1/00269: {Bonding of solid lids or wafers to the substrate}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3426: {Oxides}
- H10P 14/3456: {Polycrystalline}
- B81B 2201/025: Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
- B81B 2201/0264: Pressure sensors
- B81B 2203/0118: Cantilevers
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)

## Abstract

A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.

## Claims

### Claim 1

A method of producing a semiconductor component, the method comprising:
providing a silicon-based substrate;
depositing an oxide layer on the silicon-based substrate;
depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate;
producing an electronic component based on the polycrystalline silicon layer; and
mounting a glass- or silicon-based lid on the crystalline silicon layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the lid has a projection connected to the crystalline silicon layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the projection is ring-shaped and has spatial dimensions corresponding to spatial dimensions of the crystalline silicon layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the crystalline silicon layer surrounds the electronic component in a shape of a ring.

### Claim 5 (depends on 1)

The method of claim 1, wherein the mounting of the silicon-based lid on the crystalline silicon layer comprises wafer bonding.

### Claim 6 (depends on 5)

The method of claim 5, wherein the wafer bonding is conducted at a temperature exceeding 500° C.

### Claim 7 (depends on 1)

The method of claim 1, wherein the mounting of the glass-based lid on the crystalline silicon layer comprises anodic bonding.

### Claim 8 (depends on 1)

The method of claim 1, wherein the depositing of the polycrystalline silicon layer and of the crystalline silicon layer comprises growth from a gas phase using silane.

### Claim 9 (depends on 1)

The method of claim 1, wherein the producing of an electronic component comprises producing of a MEMS component.

### Claim 10 (depends on 9)

The method of claim 9, wherein the MEMS component includes one or more selected from the group consisting of an acceleration sensor, a pressure sensor, a vibration sensor, a gyroscope, and a time-recording component.

### Claim 11

A semiconductor component, comprising:
a silicon-based substrate;
an oxide layer atop the silicon-based substrate;
an electronic component based on polycrystalline silicon;
a crystalline silicon layer atop the silicon-based substrate and atop lateral faces of the oxide layer; and
a glass- or silicon-based lid connected to the crystalline silicon layer.

### Claim 12 (depends on 11)

The semiconductor component of claim 11, wherein the lid has a projection connected to the crystalline silicon layer.

### Claim 13 (depends on 12)

The semiconductor component of claim 12, wherein the projection is ring-shaped and has spatial dimensions corresponding to spatial dimensions of the crystalline silicon layer.

### Claim 14 (depends on 11)

The semiconductor component of claim 11, wherein the crystalline silicon layer surrounds the electronic component in a shape of a ring.

### Claim 15 (depends on 11)

The semiconductor component of claim 11, wherein the electronic component has a MEMS component.

### Claim 16 (depends on 11)

The semiconductor component of claim 11, wherein the electronic component includes one or more from the group consisting of an acceleration sensor, a pressure sensor, a vibration sensor, a gyroscope, and a time-recording component.