# US 2022/0285337 A1 · Semiconductor device and semiconductor storage device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2022/0285337 A1
- Document ID: US20220285337A1
- Status: Published application
- Kind: A1
- Application number: 17/350,852
- Filed: 2021-06-17
- Published: 2022-09-08
- Earliest claimed: 2021-03-05
- Assignees: Kioxia Corporation
- Applicants: Kioxia Corporation
- Inventors: Yasuhiro SUEMATSU; Maya INAGAKI
- Web page: https://patentgrep.com/patent/US20220285337A1

## CPC

- H10D 89/611: {using diodes as protective elements}
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/40: characterised by the peripheral circuit region
- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D 89/921: {characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses}
- H10W 20/42: Vias, e.g. via plugs
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In one embodiment, a semiconductor device includes substrate, a plurality of electrode layers provided above the substrate, and separated from each other in a first direction perpendicular to a surface of the substrate, and a first plug provided in the plurality of electrode layers. The device further includes first and second diffusion layers provided in the substrate, one of the first and second diffusion layers functioning as an anode layer of an ESD (electrostatic discharge) protection circuit, the other of the first and second diffusion layers functioning as a cathode layer of the ESD protection circuit, a second plug provided at a position that overlaps with the first diffusion layer in planar view, and electrically connected with the first diffusion layer, and a third plug provided at a position that does not overlap with the first diffusion layer in planar view, and electrically connected with the first diffusion layer.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate;
a plurality of electrode layers provided above the substrate, and separated from each other in a first direction perpendicular to a surface of the substrate;
a first plug provided in the plurality of electrode layers;
first and second diffusion layers provided in the substrate, one of the first and second diffusion layers functioning as an anode layer of an ESD (electrostatic discharge) protection circuit, the other of the first and second diffusion layers functioning as a cathode layer of the ESD protection circuit;
a second plug provided at a position that overlaps with the first diffusion layer in planar view, and electrically connected with the first diffusion layer; and
a third plug provided at a position that does not overlap with the first diffusion layer in planar view, and electrically connected with the first diffusion layer.

### Claim 2 (depends on 1)

The device of claim 1, wherein
the first, second and third plugs extend in the first direction, and
the third plug is provided at a position that overlaps with the second diffusion layer in planar view.

### Claim 3 (depends on 1)

The device of claim 1, wherein
the first, second and third plugs extend in the first direction, and
the third plug is provided at a position that overlaps with neither the first nor second diffusion layer in planar view.

### Claim 4 (depends on 1)

The device of claim 1, wherein the first, second and third plugs are positioned at a same level.

### Claim 5 (depends on 1)

The device of claim 1, wherein the first diffusion layer is surrounded by the second diffusion layer in planar view.

### Claim 6 (depends on 5)

The device of claim 5, wherein
the first diffusion layer includes a first diffusion region and a second diffusion region, and
the first diffusion region and the second diffusion region are surrounded by the second diffusion layer in planar view.

### Claim 7 (depends on 6)

The device of claim 6, wherein the first diffusion region and the second diffusion region extend in a second direction parallel to the surface of the substrate, and are provided to be separated from each other in a third direction that is parallel to the surface of the substrate and different from the second direction, each of the first diffusion region and the second diffusion region being surrounded by the second diffusion layer.

### Claim 8 (depends on 1)

The device of claim 1, wherein
the first diffusion layer extends in a second direction parallel to the surface of the substrate; and
the second diffusion layer includes a first portion extending in the second direction, and includes at least one of a second portion connected with one end of the first portion and extending in a third direction that is parallel to the surface of the substrate and different from the second direction, and a third portion connected with the other end of the first portion and extending in the third direction.

### Claim 9 (depends on 8)

The device of claim 8, further comprising a fourth plug electrically connected with the second diffusion layer,
wherein
the third plug extends in the first direction, and is provided at a position that overlaps with the first portion in planar view, and
the fourth plug extends in the first direction, and is provided at a position that overlaps with the second or third portion in planar view.

### Claim 10 (depends on 8)

The device of claim 8, wherein the second diffusion layer further includes a fourth portion connected to the second and third portions and extending in the second direction.

### Claim 11 (depends on 10)

The device of claim 10, wherein the first and fourth portions are provided to be separated from each other in the third direction.

### Claim 12 (depends on 8)

The device of claim 8, further comprising:
a first interconnect provided above the second plug and electrically connected with the second plug, and
a second interconnect provided above the third plug and electrically connected with the third plug.

### Claim 13 (depends on 12)

The device of claim 12, wherein the first and second interconnects extend in the second direction, and are provided to be separated from each other in the third direction.

### Claim 14 (depends on 12)

The device of claim 12, wherein the first interconnect includes a first region extending in the second direction, and a second region connected with one end of the first region and extending in the third direction.

### Claim 15 (depends on 14)

The device of claim 14, wherein
the second interconnect includes a third region extending in the second direction, and a fourth region connected with one end of the third region and extending in the third direction; and
the fourth region is provided on an opposite side of the second region with respect to the first and third regions.

### Claim 16 (depends on 12)

The device of claim 12, wherein the first interconnect is provided in the first direction of the first diffusion layer, the first portion and the second portion, and a second interconnect is provided in the first direction of the third portion.

### Claim 17 (depends on 12)

The device of claim 12, further comprising:
a third interconnect provided between the substrate and the second plug in the first direction, and electrically connected with the second plug;
a fourth interconnect provided between the substrate and the third plug in the first direction, and electrically connected with the third plug;
a first electrode layer included in the plurality of electrode layers, and provided above the third and fourth interconnects in the first direction;
a second electrode layer included in the plurality of electrode layers, and provided between the first electrode layer and the first and second interconnects in the first direction;
a fifth interconnect provided between the second electrode layer and the first and second interconnects;
a sixth interconnect provided between the first electrode layer and the third and fourth interconnects;
a semiconductor layer penetrating through the first and second electrode layers, one end of the semiconductor layer being electrically connected with the fifth interconnect, the other end of the semiconductor layer being electrically connected with the sixth interconnect,;
a first charge storage layer provided at a position where the first electrode layer crosses the semiconductor layer; and
a second charge storage layer provided at a position where the second electrode layer crosses the semiconductor layer.

### Claim 18 (depends on 17)

The device of claim 17, wherein a length of the second plug and a length of the third plug are larger than a length of the semiconductor layer in the first direction.

### Claim 19

A semiconductor device comprising:
a substrate;
a plurality of electrode layers provided above the substrate, and separated from each other in a first direction perpendicular to a surface of the substrate;
a first plug provided in the plurality of electrode layers;
first and second diffusion layers provided in the substrate, one of the first and second diffusion layers functioning as an anode layer of an ESD (electrostatic discharge) protection circuit, the other of the first and second diffusion layers functioning as a cathode layer of the ESD protection circuit;
a second plug extending in the first direction, provided at a position that does not overlap with the first diffusion layer in planar view, and electrically connected with the first diffusion layer; and
a third plug extending in the first direction, and electrically connected with the second diffusion layer.

### Claim 20

A semiconductor storage device comprising:
a substrate;
a plurality of electrode layers provided above the substrate, and separated from each other in a first direction perpendicular to a surface of the substrate;
a first plug provided in the plurality of electrode layers;
first and second diffusion layers provided in the substrate, one of the first and second diffusion layers functioning as an anode layer of an ESD (electrostatic discharge) protection circuit, the other of the first and second diffusion layers functioning as a cathode layer of the ESD protection circuit;
a lower interconnect provided above the substrate;
a second plug extending in the first direction, provided at a position that does not overlap with the first diffusion layer in planar view, and electrically connected with the first diffusion layer via the lower interconnect;
a source line provided above the lower interconnect;
a first electrode layer included in the plurality of electrode layers, and provided above the source layer;
a second electrode layer included in the plurality of electrode layers, and provided above the first electrode layer;
a bit line provided above the second electrode layer;
an upper interconnect provided above the bit line and the second plug;
a semiconductor layer penetrating through the first and second electrode layers, and electrically connected with the source line and the bit line;
a first charge storage layer provided at a position where the first electrode layer crosses the semiconductor layer; and
a second charge storage layer provided at a position where the second electrode layer crosses the semiconductor layer.