# US 2022/0285252 A1 · Metal component

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2022/0285252 A1
- Document ID: US20220285252A1
- Status: Published application
- Kind: A1
- Application number: 17/678,506
- Filed: 2022-02-23
- Published: 2022-09-08
- Earliest claimed: 2021-03-04
- Assignees: Mitsui High-Tec, Inc.
- Applicants: Mitsui High-Tec, Inc.
- Inventors: Kento KOGA; Yoshihito MIYAUCHI; Kazunori WATANABE; Kimihiko KUBO
- Web page: https://patentgrep.com/patent/US20220285252A1

## CPC

- H10W 70/457: {of metallic layers on leadframes}
- H10W 70/451: {Multilayered leadframes}
- H10W 72/30: Die-attach connectors
- H10W 70/045: {Cleaning}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/075: {of bond wires}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/931: {Shapes of bond pads}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

There is provided a metal component used for manufacturing a semiconductor device, including: a base material having an electrical conductivity; a nickel layer formed on a surface of the base material and containing nickel as a main component; and a noble metal layer formed on a surface of the nickel layer. The nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing 0.01 to 1 in percent by weight of phosphorus. According to the metal component of the present disclosure, a thickness of the nickel layer can be reduced while good characteristics can be maintained.

## Claims

### Claim 1

A metal component used for manufacturing a semiconductor device, the metal component comprising:
a base material having an electrical conductivity;
a nickel layer formed on a surface of the base material and containing nickel as a main component; and
a noble metal layer formed on a surface of the nickel layer, wherein
the nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing 0.01 to 1 in percent by weight of phosphorus.

### Claim 2 (depends on 1)

The metal component according to claim 1, wherein the second nickel layer contains 0.01 to 0.5 in percent by weight of phosphorus.

### Claim 3 (depends on 1)

The metal component according to claim 1, wherein a surface of the first nickel layer has a rough surface.

### Claim 4 (depends on 1)

The metal component according to claim 1, wherein the first nickel layer is formed on the surface of the base material, and the second nickel layer is formed on a surface of the first nickel layer.

### Claim 5 (depends on 1)

The metal component according to claim 1, wherein the second nickel layer is formed on the surface of the base material, and the first nickel layer is formed on a surface of the second nickel layer.

### Claim 6 (depends on 5)

The metal component according to claim 5, wherein another second nickel layer from the second nickel layer is formed on a surface of the first nickel layer.

### Claim 7 (depends on 1)

The metal component according to claim 1, wherein the second nickel layer has a thickness of 0.1 μm or more.

### Claim 8 (depends on 1)

The metal component according to claim 1, wherein a ratio of a thickness of the second nickel layer in the nickel layer is 50% or less.

### Claim 9 (depends on 1)

The metal component according to claim 1, wherein the noble metal layer is formed of at least one layer, and the noble metal layer is formed of at least one of palladium, gold, and silver.

### Claim 10

A metal component used for manufacturing a semiconductor device, the metal component comprising:
a base material having an electrical conductivity;
a nickel layer formed on a surface of the base material and containing nickel as a main component; and
a noble metal layer formed on a surface of the nickel layer, wherein
the nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing phosphorus and having a columnar crystal structure.

### Claim 11 (depends on 10)

The metal component according to claim 10, wherein a surface of the first nickel layer has a rough surface.

### Claim 12 (depends on 10)

The metal component according to claim 10, wherein the first nickel layer is formed on the surface of the base material, and the second nickel layer is formed on a surface of the first nickel layer.

### Claim 13 (depends on 10)

The metal component according to claim 10, wherein the second nickel layer is formed on the surface of the base material, and the first nickel layer is formed on a surface of the second nickel layer.

### Claim 14 (depends on 13)

The metal component according to claim 13, wherein another second nickel layer from the second nickel layer is formed on a surface of the first nickel layer.

### Claim 15 (depends on 10)

The metal component according to claim 10, wherein the second nickel layer has a thickness of 0.1 μm or more.

### Claim 16 (depends on 10)

The metal component according to claim 10, wherein a ratio of a thickness of the second nickel layer in the nickel layer is 50% or less.

### Claim 17 (depends on 10)

The metal component according to claim 10, wherein the noble metal layer is formed of at least one layer, and the noble metal layer is formed of at least one of palladium, gold, and silver.