# US 2022/0285243 A1 · Power module

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- Number: US 2022/0285243 A1
- Document ID: US20220285243A1
- Status: Published application
- Kind: A1
- Application number: 17/632,164
- Filed: 2019-10-16
- Published: 2022-09-08
- Earliest claimed: 2019-10-16
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Kenta NAKAHARA
- Web page: https://patentgrep.com/patent/US20220285243A1

## CPC

- H10W 40/25: characterised by their materials
- H10W 72/50: Bond wires
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 72/00: Interconnections or connectors in packages
- H10W 90/00: Package configurations
- H10W 40/10: Arrangements for heating
- H10W 72/07554: {changes in dispositions}
- H10W 72/534: {being rectangular}
- H10W 72/5438: {the bond wires having multiple connections on the same bond pad}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements}
- H10W 72/5453: {connecting between multiple bond pads on a chip, e.g. daisy chain}
- H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires}
- H10W 72/552: {comprising metals or metalloids, e.g. silver}
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 76/15: Containers comprising an insulating or insulated base
- H10W 76/47: Solid or gel fillings
- H10W 90/753: {between laterally-adjacent chips}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

It is an object of the present invention to improve a heat radiation property of a metal wire on a semiconductor chip in a power module. A power module includes: a plurality of metal wires connected to a surface of at least one semiconductor chip; and a thermal conductive sheet having contact with the metal wire. The metal wire includes: at least one first metal wire connecting a surface of the semiconductor chip and a circuit pattern and at least one second metal wire connecting two points on the surface of the semiconductor chip and having the same potential as the first metal wire. The thermal conductive sheet includes a graphite sheet, and a sheet surface of the thermal conductive sheet has contact with the at least one first metal wire and the at least one second metal wire.

## Claims

### Claim 1

A power module, comprising:
a base plate;
an insulating substrate provided on the base plate and having at least one circuit pattern;
at least one semiconductor chip mounted on the circuit pattern of the insulating substrate;
a plurality of metal wires connected to a surface of the semiconductor chip; and
a thermal conductive sheet having contact with the metal wire from an upper side, wherein
the metal wire includes:
at least one first metal wire connecting a surface of the semiconductor chip and the circuit pattern; and
at least one second metal wire connecting two points on the surface of the semiconductor chip and having identical potential with the first metal wire,
the thermal conductive sheet includes a graphite sheet, and
a sheet surface of the thermal conductive sheet has contact with the at least one first metal wire and the at least one second metal wire.

### Claim 2 (depends on 1)

The power module according to claim 1, wherein
the semiconductor chip includes a plurality of semiconductor chips in which control terminals are connected to the circuit patterns identical with each other or the circuit patterns having identical potential with each other, and
a sheet surface of the thermal conductive sheet has contact with the second metal wire connecting the plurality of semiconductor chips.

### Claim 3 (depends on 1)

The power module according to claim 1, wherein
the thermal conductive sheet is a clad material in which a metal thin film and the graphite sheet are overlapped with each other.

### Claim 4 (depends on 3)

The power module according to claim 3, wherein
a thickness of the metal thin film is 100 μm, and
a thickness of the graphite sheet is equal to or larger than 100 μm and equal to or smaller than 400 μm.

### Claim 5 (depends on 1)

The power module according to claim 1, further comprising:
a case fitted to the base plate and housing the insulating substrate, the semiconductor chip, the metal wire, and the thermal conductive sheet; and
a sealing material filling an inner portion of the case to seal the semiconductor chip, the metal wire, and the thermal conductive sheet, wherein
a hole passing through the sheet surface is formed in a position in the thermal conductive sheet not overlapping with the metal wire.