# US 2022/0285239 A1 · Molded semiconductor package having a substrate with bevelled edge

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- Number: US 2022/0285239 A1
- Document ID: US20220285239A1
- Status: Published application
- Kind: A1
- Application number: 17/193,737
- Filed: 2021-03-05
- Published: 2022-09-08
- Earliest claimed: 2021-03-05
- Assignees: Infineon Technologies Austria AG
- Applicants: Infineon Technologies Austria AG
- Inventors: Man Kyo Jong; Joon Seo Son
- Web page: https://patentgrep.com/patent/US20220285239A1

## CPC

- H10W 74/10: characterised by their shape or disposition
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/778: {in encapsulations}
- H10W 70/465: {Bumps or wires}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 72/50: Bond wires
- H10W 74/014: {using batch processing}
- H10W 74/016: {using moulds}
- H10W 74/127: {characterised by arrangements for sealing or adhesion}
- H10W 90/811: {Multiple chips on leadframes}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/534: {being rectangular}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A molded semiconductor package includes: semiconductor dies attached to a first side of a leadframe and electrically interconnected to form a power electronic circuit; a substrate attached to a second side of the leadframe opposite the first side, and including a metal body and electrically insulative material that separates the metal body from the leadframe; and a molding compound encapsulating the dies. The metal body includes a first surface in contact with the electrically insulative material, a second surface opposite the first surface and which is not covered by the molding compound, and a bevelled edge extending between the first and second surfaces. The bevelled edge of the metal body has a first sloped side face that extends from the first surface to an apex of the bevelled edge, and a second sloped side face that extends from the apex to the second surface. Methods of producing the package are also described.

## Claims

### Claim 1

A molded semiconductor package, comprising:
a plurality of semiconductor dies attached to a first side of a leadframe and electrically interconnected to form a power electronic circuit;
a substrate attached to a second side of the leadframe opposite the first side, the substrate comprising a metal body and an electrically insulative material that separates the metal body from the leadframe; and
a molding compound encapsulating the plurality of semiconductor dies,
wherein the metal body comprises:
a first surface in contact with the electrically insulative material;
a second surface opposite the first surface and which is not covered by the molding compound; and
a bevelled edge that extends between the first surface and the second surface,
wherein the bevelled edge of the metal body has a first sloped side face that extends from the first surface to an apex of the bevelled edge, and a second sloped side face that extends from the apex to the second surface.

### Claim 2 (depends on 1)

The molded semiconductor package of claim 1, wherein the molding compound contacts both the first sloped side face and the second sloped side face of the metal body.

### Claim 3 (depends on 1)

The molded semiconductor package of claim 1, wherein an angle of the first sloped side face of the metal body as measured relative to a vertical projection from the apex of the bevelled edge is in a range of 30 to 60 degrees.

### Claim 4 (depends on 1)

The molded semiconductor package of claim 1, wherein an angle of the second sloped side face of the metal body as measured relative to a vertical projection from the apex of the bevelled edge is in a range of 30 to 60 degrees.

### Claim 5 (depends on 1)

The molded semiconductor package of claim 1, wherein the first sloped side face and the second sloped side face of the metal body have the same slope.

### Claim 6 (depends on 1)

The molded semiconductor package of claim 1, wherein the metal body has a thickness of 2 mm measured between the first surface and the second surface, and wherein the bevelled edge of the metal body has a thickness in a range of 0.8 to 1.2 mm measured from the apex inward.

### Claim 7 (depends on 1)

The molded semiconductor package of claim 1, wherein the electrically insulative material has a sloped side face having the same angle as the first sloped side face of the metal body.

### Claim 8 (depends on 1)

The molded semiconductor package of claim 1, wherein the metal body is at least 10× thicker than the electrically insulative material.

### Claim 9 (depends on 1)

The molded semiconductor package of claim 1, wherein the electrically insulative material comprises one or more of SiO2, Al2O3, AlN, BN, and resin.

### Claim 10 (depends on 1)

The molded semiconductor package of claim 1, wherein the metal body comprises Al, Cu or AlCu.

### Claim 11

A method of producing a molded semiconductor package, the method comprising:
attaching a plurality of semiconductor dies to a first side of a leadframe;
electrically interconnecting the plurality of semiconductor dies to form a power electronic circuit;
attaching a substrate to a second side of the leadframe opposite the first side, the substrate comprising a metal body and an electrically insulative material that separates the metal body from the leadframe; and
encapsulating the plurality of semiconductor dies in a molding compound,
wherein the metal body comprises:
a first surface in contact with the electrically insulative material;
a second surface opposite the first surface and which is not covered by the molding compound; and
a bevelled edge that extends between the first surface and the second surface,
wherein the bevelled edge of the metal body has a first sloped side face that extends from the first surface to an apex of the bevelled edge, and a second sloped side face that extends from the apex to the second surface.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
prior to attaching the substrate to the second side of the leadframe, singulating the substrate from a substrate sheet.

### Claim 13 (depends on 12)

The method of claim 12, further comprising:
prior to singulating the substrate from the substrate sheet, cutting a first main surface of the substrate sheet with a blade having sloped sidewalls to form the first sloped side face of the substrate, and cutting a second main surface of the substrate sheet opposite the first main surface with the same or different blade having sloped sidewalls to form the second sloped side face of the substrate.

### Claim 14 (depends on 13)

The method of claim 13, wherein the sloped sidewalls of each blade used to cut the substrate sheet are angled in a range of 30 to 60 degrees.

### Claim 15

A method of batch producing molded semiconductor package substrates, the method comprising:
forming an electrically insulative layer on a first main surface of a metal sheet;
forming a plurality of intersecting V-shaped grooves in the first main surface of the metal sheet using a blade having sloped sidewalls;
forming a plurality of intersecting V-shaped grooves in the second main surface of the metal sheet using the same or different blade having sloped sidewalls, the intersecting V-shaped grooves formed in the second main surface of the metal sheet being vertically aligned with the intersecting V-shaped grooves formed in the first main surface of the metal sheet; and
singulating the molded semiconductor package substrates along the V-shaped grooves formed in the first main surface and the second main surface of the metal sheet such that each singulated molded semiconductor package substrate has a metal body and an electrically insulative material.

### Claim 16 (depends on 15)

The method of claim 15, wherein:
the metal body of each molded semiconductor package substrate comprises:
a first surface in contact with the electrically insulative material;
a second surface opposite the first surface; and
a bevelled edge that extends between the first surface and the second surface;
the bevelled edge of each metal body has a first sloped side face that extends from the first surface of the metal body to an apex of the bevelled edge, and a second sloped side face that extends from the apex to the second surface of the metal body;
an angle of the first sloped side face of each metal body corresponds to the angle of the sidewalls of the blade used to form the V-shaped grooves in the first main surface of the metal sheet; and
an angle of the second sloped side face of each metal body corresponds to the angle of the sidewalls of the blade used to form the V-shaped grooves in the second main surface of the metal sheet.

### Claim 17 (depends on 16)

The method of claim 16, wherein the angle of the sloped sidewalls of the blade used to form the V-shaped grooves in the first main surface of the metal sheet is in a range of 30 to 60 degrees.

### Claim 18 (depends on 16)

The method of claim 16, wherein the angle of the sloped sidewalls of the blade used to form the V-shaped grooves in the second main surface of the metal sheet is in a range of 30 to 60 degrees.

### Claim 19 (depends on 16)

The method of claim 16, wherein:
the electrically insulative layer is formed on the first main surface of the metal sheet before the V-shaped grooves are formed in the first main surface of the metal sheet;
the electrically insulative material of each molded semiconductor package substrate has a sloped side face having the same angle as the first sloped side face of the metal body of the molded semiconductor package substrate; and
an angle of the sloped side face of the electrically insulative material of each molded semiconductor package substrate corresponds to the angle of the sidewalls of the blade used to form the V-shaped grooves in the first main surface of the metal sheet.

### Claim 20 (depends on 15)

The method of claim 15, wherein the same blade is used to form the V-shaped grooves in the both the first main surface and the second main surface of the metal sheet.