# US 2022/0285174 A1 · Substrate processing apparatus including filling gas supply line and substrate processing method using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0285174 A1 - Document ID: US20220285174A1 - Status: Published application - Kind: A1 - Application number: 17/499,988 - Filed: 2021-10-13 - Published: 2022-09-08 - Earliest claimed: 2021-03-08 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd - Inventors: Byunghwan KONG; Heeyeon KIM; Homin SON; Geunkyu CHOI - Web page: https://patentgrep.com/patent/US20220285174A1 ## CPC - H10P 72/04: {Apparatus for manufacture or treatment} - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - C23C 16/45517: {Confinement of gases to vicinity of substrate} - C23C 16/45519: {Inert gas curtains} - C23C 16/45523: {Pulsed gas flow or change of composition over time} - C23C 16/45578: {Elongated nozzles, tubes with holes} - C23C 16/4583: {the substrate being supported substantially horizontally} - H10P 72/0432: {mainly by conduction} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas. ## Claims ### Claim 1 A substrate processing method comprising: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and. the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas. ### Claim 2 (depends on 1) The substrate processing method of claim 1, wherein the edge of the wafer region is adjacent to the gap region. ### Claim 3 (depends on 1) The substrate processing method of claim 1, wherein: the injecting the inert gas into the gap region is performed at a first time, and the injecting the process gas into the wafer region is performed at a second time later than the first time. ### Claim 4 (depends on 1) The substrate processing method of claim 1, wherein the gap region comprises a first region and a second region, wherein the first region is between an exhaust hole of the tube and a filling gas supply line, wherein the second. region between the filling gas supply line and a process gas supply line, and wherein the is the inert gas into the gap region comprises injecting the inert gas into the first region and the second region from the filling gas supply line. ### Claim 5 (depends on 4) The substrate processing method of claim 4, wherein the injecting the inert gas into the gap region further comprises injecting the inert gas into the second region from a guide gas supply line disposed between the filling gas supply line and the process gas supply line. ### Claim 6 (depends on 5) The substrate processing method of claim 5, wherein the injecting the inert gas from the guide gas supply line comprises injecting the inert gas through a first guide hole of the guide gas supply line, and wherein the first guide hole faces the second region. ### Claim 7 (depends on 5) The substrate processing method of claim 5, further comprising: injecting the inert gas into the wafer region from the guide gas supply line through a second guide hole of the guide gas supply line, and wherein the second guide hole faces the wafer region. ### Claim 8 (depends on 4) The substrate processing method of claim 4, wherein the injecting the inert gas into the first region from the filling gas supply line comprises injecting the inert gas through a first filling hole of the filling gas supply line, and wherein the first filling hole faces the first region. ### Claim 9 (depends on 4) The substrate processing method of claim 4, wherein the injecting the inert gas into the second region from the filling gas supply line comprises injecting the inert gas through a second filling hole of the filling gas supply line, and wherein the second filling hole faces the second region, ### Claim 10 A substrate processing method comprising: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, herein the injecting the inert gas into the gap region of the tube starts at a first time, wherein the injecting the process gas into the wafer region starts at a second time later than the first time. ### Claim 11 (depends on 10) The substrate processing method of claim 10, wherein the injecting the inert gas into the gap region comprises injecting the inert gas from a filling gas supply line, and the filling gas supply line is disposed nearer to an exhaust hole of the tube than to a process gas supply line. ### Claim 12 (depends on 11) The substrate processing method of claim 11, wherein the gap region comprises a first region between the exhaust hole and the filling gas supply line, and the injecting the inert gas into the gap region comprises injecting the inert gas into the first region from the filling gas supply line. ### Claim 13 (depends on 10) The substrate processing method of claim 10, wherein the injecting the inert gas into the gap region and the injecting the process gas into the wafer region simultaneously end at a third time later than the second time. ### Claim 14 (depends on 10) The substrate processing method of claim 10, wherein the gap region comprises a first region and a second region, wherein a filling gas supply line is disposed between the first region and the second region, wherein the filling gas supply line comprises a first filling hole and a second filling hole, wherein the first filling hole faces the first region, and wherein the second filing hole faces the second region. ### Claim 15 A substrate processing method comprising: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wail of the tube and the wafer; and injecting a process gas into the wafer region of the tube, wherein the gap region comprises a first region and a second region, wherein the first region is between a filling gas supply line and an exhaust hole of the tube, and wherein the second region is between a process gas supply line and the filling gas supply line, wherein the injecting the inert gas into the gap region of the tube comprises injecting the inert gas into the first region from the filling gas supply line. ### Claim 16 (depends on 15) The substrate processing method of claim 15, wherein the injecting the inert gas into the first region from the filling gas supply line comprises injecting the inert gas through a first filling hole of the filling gas supply line, and wherein the first filling hole faces the first region. ### Claim 17 (depends on 15) The substrate processing method of claim 15, wherein the injecting the inert gas into the gap region further comprises injecting the inert gas into the second region from the filling gas supply line. ### Claim 18 (depends on 17) The substrate process method of claim 17, Wherein the injecting the inert gas into the second region from the filling gas supply line comprises injecting the inert gas through a second filling hole of the filling gas supply line, and wherein the second filling hole faces the second region. ### Claim 19 (depends on 15) The substrate processing method of claim 15, wherein the injecting the inert gas into the gap region comprises injecting the inert gas into the second region from a guide gas supply line disposed between the process gas supply line and the filling gas supply line. ### Claim 20 (depends on 19) The substrate processing method of claim 19, wherein the injecting the inert gas into the second region from the guide gas supply line comprises injecting the inert gas through a first guide hole of the guide gas supply line, and wherein the first guide hole faces the second region.