Method of manufacturing semiconductor device, method of manufacturing stacked wiring structure, and ion beam irradiation apparatus

A method of manufacturing a stacked wiring structure comprising:

• preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order in a first direction, the stacked body including a first region and a second region different from the first region;
• etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam;
• and
• etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

An Ion beam irradiation apparatus comprising:

• a first plasma generation chamber configured to generate a first ion beam;
• a first shutter configured to shield the first ion beam;
• a shutter control unit configured to control the opening and closing of the first shutter;
• and
• a beam irradiation chamber including a stage configured to for fixing the substrate and a relative position control unit control unit configured to control the relative position of the stage and the first ion beam.