# US 2022/0285148 A1 · Semiconductor arrangement formation

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- Number: US 2022/0285148 A1
- Document ID: US20220285148A1
- Status: Published application
- Kind: A1
- Application number: 17/190,577
- Filed: 2021-03-03
- Published: 2022-09-08
- Earliest claimed: 2021-03-03
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company Limited
- Inventors: Ting-Jui CHEN; Chen CHIH-FEN; Jason YU; Tung-Hsi HSIEH; Jiang-He XIE
- Web page: https://patentgrep.com/patent/US20220285148A1

## CPC

- H10P 70/20: {Cleaning during device manufacture}
- H10F 30/221: the potential barrier being a PN homojunction
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10P 32/00: Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00)
- H10P 76/204: {of organic photoresist masks}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/031: {of isolation regions comprising PN junctions}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W 10/30: Isolation regions comprising PN junctions
- H10P 72/0421: {for drying etching}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue.

## Claims

### Claim 1

A method for forming a semiconductor arrangement, comprising:
forming a patterned photoresist over a top surface of a substrate;
doping a first portion of the substrate using the patterned photoresist;
removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist; and
treating the substrate with nitrous oxide to remove the fluoride residue.

### Claim 2 (depends on 1)

The method of claim 1, comprising:
after treating the substrate with the nitrous oxide, forming a first dielectric layer over the top surface of the substrate.

### Claim 3 (depends on 1)

The method of claim 1, comprising:
prior to treating the substrate with the nitrous oxide, cleaning the top surface of the substrate.

### Claim 4 (depends on 3)

The method of claim 3, wherein:
cleaning the top surface of the substrate comprises utilizing deionized water.

### Claim 5 (depends on 3)

The method of claim 3, comprising:
after cleaning the top surface of the substrate and prior to treating the substrate with the nitrous oxide, etching the top surface of the substrate to remove negative oxides.

### Claim 6 (depends on 1)

The method of claim 1, comprising:
prior to treating the substrate with the nitrous oxide, forming a first isolation structure and a second isolation structure in the substrate.

### Claim 7 (depends on 6)

The method of claim 6, wherein:
the first portion of the substrate is between the first isolation structure and the second isolation structure.

### Claim 8 (depends on 6)

The method of claim 6, wherein:
the first isolation structure is between the first portion of the substrate and the second isolation structure.

### Claim 9 (depends on 1)

The method of claim 1, wherein:
treating the substrate with the nitrous oxide comprises pumping the nitrous oxide into a chamber comprising the substrate.

### Claim 10 (depends on 9)

The method of claim 9, wherein:
treating the substrate with the nitrous oxide comprises removing the fluoride residue from the chamber using an exhaust.

### Claim 11

A method of forming a semiconductor arrangement, comprising:
removing a patterned photoresist from a top surface of a substrate;
transferring the substrate to a wafer storage device;
transferring the substrate from the wafer storage device to a first chamber;
in the first chamber, forming a first dielectric layer over the top surface of the substrate; and
transferring the substrate from the first chamber to the wafer storage device.

### Claim 12 (depends on 11)

The method of claim 11, comprising:
after removing the patterned photoresist and prior to forming the first dielectric layer, treating the substrate to remove a residue from the top surface of the substrate.

### Claim 13 (depends on 12)

The method of claim 12, wherein:
removing the patterned photoresist comprises using a gas comprising fluoride such that the residue comprises fluoride residue from the gas; and
treating the substrate comprises treating the substrate with nitrous oxide to remove the fluoride residue.

### Claim 14 (depends on 11)

The method of claim 11, comprising:
doping a first portion of the substrate using the patterned photoresist.

### Claim 15 (depends on 11)

The method of claim 11, wherein:
removing the patterned photoresist is performed in a second chamber; and
transferring the substrate to the wafer storage device comprises transferring the substrate from the second chamber to the wafer storage device.

### Claim 16

A method for forming a semiconductor arrangement, comprising:
removing a patterned photoresist from a top surface of a substrate using a gas comprising fluoride, wherein:
polymer residue from the patterned photoresist remains on the top surface of the substrate after removing the patterned photoresist; and
fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist;
transferring the substrate to a cleaning tank;
cleaning the top surface of the substrate in the cleaning tank to remove the polymer residue;
transferring the substrate to a chamber; and
treating the substrate with nitrous oxide in the chamber to remove the fluoride residue.

### Claim 17 (depends on 16)

The method of claim 16, comprising:
after treating the substrate with the nitrous oxide, forming a first dielectric layer over the top surface of the substrate.

### Claim 18 (depends on 16)

The method of claim 16, comprising:
after cleaning the top surface of the substrate and prior to transferring the substrate to the chamber, transferring the substrate from the cleaning tank to a wafer storage device.

### Claim 19 (depends on 18)

The method of claim 18, wherein:
transferring the substrate to the chamber comprises transferring the substrate from the wafer storage device to the chamber.

### Claim 20 (depends on 19)

The method of claim 19, comprising:
after treating the substrate with the nitrous oxide, transferring the substrate from the chamber to the wafer storage device.