# US 2022/0278291 A1 · Display panel and manufacturing method therefor, and display apparatus

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- Number: US 2022/0278291 A1
- Document ID: US20220278291A1
- Status: Published application
- Kind: A1
- Application number: 17/635,993
- Filed: 2021-02-02
- Published: 2022-09-01
- Earliest claimed: 2020-03-31
- Assignees: Beijing BOE Technology Development Co., Ltd.; Boe Technology Group Co., Ltd.
- Applicants: Beijing BOE Technology Development Co., Ltd.; BOE Technology Group Co., Ltd.
- Inventors: Aidi ZHANG; Yichi ZHANG; Jinglu BAI
- Web page: https://patentgrep.com/patent/US20220278291A1

## CPC

- H10K 59/35: comprising red-green-blue [RGB] subpixels
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/15: Hole transporting layers
- H10K 50/16: Electron transporting layers
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 71/441: {in the presence of solvent vapors, e.g. solvent vapour annealing}
- H10K 2101/80: {Composition varying spatially, e.g. having a spatial gradient}
- H10K 2102/00: Constructional details relating to the organic devices covered by this subclass
- H10K 2102/101: {comprising transparent conductive oxides [TCO]}
- H10K 2102/321: {Inverted OLED, i.e. having cathode between substrate and anode}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

Provided are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes a plurality of sub-pixels of at least two colors and further comprises: a base substrate; a first electrode on the base substrate; an electron transport layer at the side of the first electrode facing away from the base substrate; a quantum dot light-emitting layer at the side of the electron transport layer facing away from the base substrate; and a second electrode at the side of the quantum dot light-emitting layer facing away from the base substrate. Materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different. The electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide. Contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.

## Claims

### Claim 1

A display panel, wherein the display panel comprises a plurality of sub-pixels of at least two colors, and further comprises:
a base substrate;
a first electrode on the base substrate;
an electron transport layer on a side of the first electrode facing away from the base substrate;
a quantum dot light-emitting layer on a side of the electron transport layer facing away from the base substrate, wherein materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different; and
a second electrode on a side of the quantum dot light-emitting layer facing away from the base substrate;
wherein the electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide; and
contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.

### Claim 2 (depends on 1)

The display panel according to claim 1, wherein in a direction from the base substrate to the second electrode, contents of the metal chalcogenide in the alloy heterostructure at a position of a sub-pixel are in increased gradient distribution.

### Claim 3 (depends on 1)

The display panel according to claim 1, wherein depths of the metal chalcogenide in the alloy heterostructure at the positions of the sub-pixels of different colors are different.

### Claim 4 (depends on 1)

The display panel according to claim 1, wherein the sub-pixels comprise a red sub-pixel, a green sub-pixel and a blue sub-pixel; and
a percentage of the metal chalcogenide in the alloy heterostructure at a position of the red sub-pixel is 4.5%-12.3%, a percentage of the metal chalcogenide in the alloy heterostructure at a position of the green sub-pixel is 17.9%-28.7%, and a percentage of the metal chalcogenide in the alloy heterostructure at a position of the blue sub-pixel is 31.5%-45.8%.

### Claim 5 (depends on 1)

The display panel according to claim 1, wherein the metal chalcogenide comprises a metal sulfide, a metal selenide or a metal telluride.

### Claim 6 (depends on 1)

The display panel according to claim 1, wherein the metal oxide and the metal chalcogenide are provided with at least one same metal element.

### Claim 7 (depends on 6)

The display panel according to claim 6, wherein:
the metal oxide is zinc oxide, magnesium zinc oxide, aluminum zinc oxide or magnesium aluminum zinc oxide; and
the metal chalcogenide is zinc sulfide, magnesium zinc sulfide, aluminum zinc sulfide or magnesium aluminum zinc sulfide.

### Claim 8 (depends on 1)

The display panel according to claim 1, further comprising:
a hole injection layer between the quantum dot light-emitting layer and the second electrode, and
a hole transport layer between the hole injection layer and the quantum dot light-emitting layer.

### Claim 9 (depends on 1)

A method for preparing the display panel according to claim 1, comprising:
forming the first electrode on the base substrate;
forming the electron transport layer on the first electrode; wherein the electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide; and the contents of the metal chalcogenide in the alloy heterostructure at the positions of the sub-pixels of different colors are different;
forming the quantum dot light-emitting layer on the electron transport layer; wherein the materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different; and
forming the second electrode layer on the quantum dot light-emitting layer.

### Claim 10 (depends on 9)

The method according to claim 9, wherein said forming the electron transport layer on the first electrode comprises:
forming a film layer of the metal oxide on the first electrode;
forming a film layer of a reactive compound on the film layer of the metal oxide;
providing a mask plate comprising a plurality of light-transmitting areas;
shielding the film layer of the reactive compound by the mask plate; and
heating the light-transmitting areas by laser, so that the film layer of the metal oxide at the light-transmitting areas reacts with the reactive compound to obtain the metal chalcogenide.

### Claim 11 (depends on 10)

The method according to claim 10, wherein positions of sub-pixels of at least two colors are provided with the metal chalcogenide;
for sub-pixels of each of the at least two colors, following operations are executed:
forming a film layer of a reactive compound on the film layer of the metal oxide;
providing a mask plate comprising a plurality of light-transmitting areas, wherein the light-transmitting areas each corresponds to a respective one sub-pixel of the each color;
shielding the film layer of the reactive compound by the mask plate; and
heating the light-transmitting areas by laser, so that the metal chalcogenide is formed at positions of the sub-pixels of the each color.

### Claim 12 (depends on 11)

The method according to claim 11, wherein for the sub-pixels of different colors, a quantity of times of executing the operations is different.

### Claim 13 (depends on 11)

The method according to claim 11, wherein for the sub-pixels of different colors, a duration of said heating the light-transmitting areas by laser is different.

### Claim 14 (depends on 10)

The method according to claim 10, wherein said forming the film layer of the metal oxide on the first electrode comprises:
preparing a precursor solution corresponding to the metal oxide;
forming a thin film on a film layer where the first electrode is located by adopting the precursor solution; and
forming the film layer of the metal oxide by heating the display panel to evaporate a solvent of the precursor solution.

### Claim 15 (depends on 10)

The method according to the claim 10, wherein said forming the film layer of the reactive compound on the film layer of the metal oxide comprises:
coating the film layer of the metal oxide with a sulfur-containing compound.

### Claim 16 (depends on 9)

The method according to claim 9, wherein after forming the quantum dot light-emitting layer on the electron transport layer and before forming the second electrode layer on the quantum dot light-emitting layer, the method further comprises:
forming a hole transport layer on the quantum dot light-emitting layer; and
forming a hole injection layer on the hole transport layer.

### Claim 17 (depends on 1)

A display apparatus, wherein the display apparatus comprises the display panel according to claim 1.