# US 2022/0278136 A1 · Semiconductor device and method for manufacturing the same

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- Number: US 2022/0278136 A1
- Document ID: US20220278136A1
- Status: Published application
- Kind: A1
- Application number: 17/742,432
- Filed: 2022-05-12
- Published: 2022-09-01
- Earliest claimed: 2009-07-10
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei YAMAZAKI; Masayuki SAKAKURA
- Web page: https://patentgrep.com/patent/US20220278136A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10H 20/833: Transparent materials
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10P 14/3426: {Oxides}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

## Claims

### Claim 1

(canceled)

### Claim 2

A semiconductor device comprising:
a substrate;
a first conductive layer over the substrate;
a first insulating layer over the first conductive layer;
a second conductive layer, a third conductive layer, and an oxide semiconductor layer on the first insulating layer; and
a second insulating layer over the oxide semiconductor layer.

### Claim 3

A semiconductor device comprising:
a substrate;
a first conductive layer over the substrate;
a first insulating layer over the first conductive layer;
a second conductive layer, a third conductive layer, and an oxide semiconductor layer on the first insulating layer; and
a second insulating layer over the oxide semiconductor layer,
wherein the oxide semiconductor layer is in contact with a top surface and a side surface of the second conductive layer and in contact with a top surface and a side surface of the third conductive layer.

### Claim 4

A semiconductor device comprising:
a substrate;
a first conductive layer over the substrate;
a first insulating layer over the first conductive layer;
a second conductive layer, a third conductive layer, and an oxide semiconductor layer on the first insulating layer; and
a second insulating layer over the oxide semiconductor layer,
wherein the oxide semiconductor layer is in contact with a top surface and a side surface of the second conductive layer and in contact with a top surface and a side surface of the third conductive layer,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc, and
wherein the oxide semiconductor layer comprises nanocrystals.

### Claim 5 (depends on 2)

The semiconductor device according to claim 2, wherein the oxide semiconductor layer overlaps with the first conductive layer with the second conductive layer provided therebetween.

### Claim 6 (depends on 3)

The semiconductor device according to claim 3, wherein the oxide semiconductor layer overlaps with the first conductive layer with the second conductive layer provided therebetween.

### Claim 7 (depends on 4)

The semiconductor device according to claim 4, wherein the oxide semiconductor layer overlaps with the first conductive layer with the second conductive layer provided therebetween.

### Claim 8 (depends on 2)

The semiconductor device according to claim 2, wherein the first conductive layer extends beyond end portions of the oxide semiconductor layer.

### Claim 9 (depends on 3)

The semiconductor device according to claim 3, wherein the first conductive layer extends beyond end portions of the oxide semiconductor layer.

### Claim 10 (depends on 4)

The semiconductor device according to claim 4, wherein the first conductive layer extends beyond end portions of the oxide semiconductor layer.