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US 2022/0276552 A1Published application
Photomask, method of fabricating a photomask, and method of fabricating a semiconductor structure using a photomask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTZU HAN LIU, CHIH-WEI WEN, CHUNG-HUNG LIN
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Abstract
The present disclosure provides a photomask and a method for fabricating a semiconductor structure with a photomask. The photomask includes a substrate, and a polymer layer over a surface of the substrate, wherein the polymer layer includes a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the surface of the photomask.
Claims20
A photomask, comprising:
- a substrate;
- and
- a polymer layer over a surface of the substrate, wherein the polymer layer comprises a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the surface of the photomask.
A photomask, comprising:
- a substrate;
- and
- a first film over a surface of the substrate, comprising:
- an adhesive layer, wherein the adhesive layer comprises a conductive dopant consisting of a metallic ion or graphene;
- a thermoplastic layer over the adhesive layer;
- and
- a hydrophobic layer over the thermoplastic layer.
4 more elements
A method for fabricating a semiconductor structure with an extreme ultraviolet (EUV) photomask, comprising:
- placing a substrate over a supporter;
- forming a layer over the substrate;
- patterning the layer with an actinic radiation reflected off an EUV photomask, wherein a protective film is disposed on the EUV photomask, and the protective film comprises:
- a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and a surface of the photomask.
1 more element
Dependencies are inferred from the claim text.