Modification of stress response and adhesion behavior of dielectric through tuning of mechanical properties

A process for preparing dielectric comprising the steps of:

• (i) preparing a dielectric material comprising one or more constituent components each having a Tg value of 70° C. or lower;
• (ii) applying the dielectric material of to a polymeric organic semiconductor layer;
• (iii) forming a dielectric layer on the polymeric organic semiconductor by annealing the dielectric material at a temperature exceeding the Tg value of the constituent components;
• and (iv) optionally applying a vapor deposited dielectric to the dielectric layer,
• wherein the dielectric material is applied to the polymeric organic semiconductor layer in sufficient quantity such that the dielectric layer has a thickness of 200 nm or greater after annealing.