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US 2022/0223365 A1Published application
Method of permanently phase-transiting semimetal using ion implantation and semimetal phase-transited thereby
AssigneeUniversity-Industry Cooperation Group of Kyung Hee University
InventorSuk Ho CHOI
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Abstract
Disclosed is a technology of permanently phase-transiting a semimetal using ion implantation. More particularly, the permanent phase transition of a dirac semimetal into a weyl semimetal can be induced by implanting non-magnetic material ions into the dirac semimetal according to an embodiment.
Claims10
A dirac semimetal, the dirac semimetal being induced to be permanently phase-transited into a weyl semimetal (WSM) by implanting non-magnetic material ions thereinto.
A method of permanently phase-transiting a dirac semimetal (DSM), the method comprising:
- forming DSM;
- and
- implanting non-magnetic material ions into the formed DSM to induce permanent phase transition thereof into a weyl semimetal (WSM).
Dependencies are inferred from the claim text.