Semiconductor laser device and optical apparatus

A semiconductor laser device comprising:

• a substrate having a main surface;
• and
• a plurality of light-emitting regions that are formed over the main surface of the substrate, and emit laser beams having a wavelength of 600 nm or more and 700 nm or less;
• wherein among the laser beams emitted from the light-emitting regions, the difference between a peak wavelength in an optical spectrum of at least one laser beam and a peak wavelength in an optical spectrum of the other laser beams is 1.5 nm or more;
• the laser beams have spectral widths that are expanded by applying a current superimposed with a high frequency current to the light-emitting regions;
• and
• the laser beams emitted from the light-emitting regions are projected to a projection part through a waveguide.

An optical apparatus comprising:

• a semiconductor laser device;
• a drive circuit that drives the semiconductor laser device by applying a current to the semiconductor laser device;
• a high frequency superimposition circuit that is connected to the drive circuit;
• a waveguide that guides a laser beam emitted from the semiconductor laser device;
• and
• a projector part to which the laser beam guided through the waveguide is projected;
• wherein the semiconductor laser device comprises a plurality of light-emitting regions that are formed over a substrate and emit the laser beams having a wavelength of 600 nm or more and 700 nm or less;
• among the laser beams emitted from the light-emitting regions, the difference between a peak wavelength in an optical spectrum of at least one laser beam and a peak wavelength in an optical spectrum of the other laser beams is 1.5 nm or more;
• and
• the laser beams have spectral widths that are expanded by superimposing a high frequency current on the current by the high frequency superimposition circuit.