Spin diode devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsWai Cheung LAW, Grayson Dao Hwee WONG, Kazutaka YAMANE, Chim Seng SEET, Wen Siang LEW
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Abstract
According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy.
Claims20
A spin diode device comprising:
- a magnetic tunnel junction stack comprising:
- a lower magnetic layer comprising a lower magnetic film;
- a tunnel barrier layer over the lower magnetic layer, the tunnel barrier layer comprising an insulating material;
- and
- an upper magnetic layer over the tunnel barrier layer, the upper magnetic layer comprising an upper magnetic film;
- wherein each of the lower magnetic film and the upper magnetic film has perpendicular magnetic anisotropy.
Dependencies are inferred from the claim text.