Method for manufacturing a mems device by first hybrid bonding a cmos wafer to a mems wafer

A microelectromechanical system (MEMS) device, comprising:

• a metallization structure disposed over a first semiconductor substrate, wherein the metallization structure comprises a conductive interconnect structure disposed in an interlayer dielectric (ILD) structure, wherein the ILD structure has a first portion overlying a second portion, and wherein the first portion of the ILD structure overhangs a first sidewall of the second portion of the ILD structure;
• a cavity disposed in the metallization structure, wherein the cavity is disposed laterally between the first sidewall of the second portion of the ILD structure and a second sidewall of the second portion of the ILD structure opposite the first sidewall of the second portion of the ILD structure;
• and
• a second semiconductor substrate disposed over the metallization structure, wherein the second semiconductor substrate comprises a movable element disposed laterally between the first sidewall of the second portion of the ILD structure and the second sidewall of the second portion of the ILD structure.

A microelectromechanical system (MEMS) device, comprising:

• a metallization structure disposed over a first semiconductor substrate, wherein:
• the metallization structure comprises a first contact pad disposed in a first portion of a dielectric structure;
• the metallization structure comprises a second contact pad disposed in a second portion of the dielectric structure;
• the first contact pad and the first portion of the dielectric structure are both disposed over the second contact pad and the second portion of the dielectric structure;
• the first contact pad overlies and is bonded to the second contact pad;
• a first sidewall of the first portion of the dielectric structure is laterally spaced from a first sidewall of the second portion of the dielectric structure in a lateral direction;
• a sidewall of the first contact pad is laterally spaced from a sidewall of the second contact pad in the lateral direction;
• a cavity disposed in the metallization structure, wherein the cavity is disposed laterally between the first sidewall of the first portion of the dielectric structure and a second sidewall of the first portion of the dielectric structure opposite the first sidewall of the first portion of the dielectric structure, and wherein the first sidewall of the first portion of the dielectric structure, the first sidewall of the second portion of the dielectric structure, the sidewall of the first contact pad, and the sidewall of the second contact pad are each disposed on a same side of the cavity;
• and
• a second semiconductor substrate disposed over the metallization structure, wherein the second semiconductor substrate comprises a movable element laterally disposed between the first sidewall of the first portion of the dielectric structure and the second sidewall of the first portion of the dielectric structure.