Polishing pad, manufacturing method thereof, method for manufacturing semiconductor device using same

A method for manufacturing a polishing pad, the method comprising the steps of:

• i) preparing a prepolymer composition;
• ii) preparing a composition for manufacturing a polishing layer, comprising the prepolymer composition, a foaming agent, a curing agent, and a catalyst;
• and
• iii) manufacturing a polishing layer by curing the composition for manufacturing the polishing layer,
• wherein a polishing surface of the polishing layer has a Spk reduction rate according to the following Equation 1 of 5 to 25%:
• 
• Initial
• ⁢
• ⁢
• S
• pk
• -
• After
• ⁢
• ⁢
• polishing
• ⁢
• ⁢
• S
• pk
• 
• Initial
• ⁢
• ⁢
• S
• pk
• [
• Equation
• ⁢
• ⁢
• 1
• ]
• where,
• Spk relates to a three-dimensional parameter for surface roughness, and means the average height of the protruding peak after expressing the height of the total surface roughness in a graph,
• the initial Spk is Spk for the polishing surface before the polishing process, and
• Spk after polishing is Spk for the polishing surface after attaching a 300 mm diameter silicon wafer on which silicon oxide is deposited to a surface plate, maintaining a polishing load of 4.0 psi and a rotational speed of the polishing pad of 150 rpm, injecting the calcined ceria slurry at a rate of 250 ml/min, and performing the polishing process for 60 seconds.

A method for manufacturing a semiconductor device, the method comprising the steps of:

• 1) providing a polishing pad comprising a polishing layer;
• and
• 2) polishing the semiconductor substrate while relatively rotating them so that the surface to be polished of a semiconductor substrate comes into contact with a polishing surface of the polishing layer,
• wherein the polishing surface of the polishing layer has a Spk reduction rate according to the following Equation 1 of 5 to 25%:
• 
• Initial
• ⁢
• ⁢
• S
• pk
• -
• After
• ⁢
• ⁢
• polishing
• ⁢
• ⁢
• S
• pk
• 
• Initial
• ⁢
• ⁢
• S
• pk
• [
• Equation
• ⁢
• ⁢
• 1
• ]
• where,
• Spk relates to a three-dimensional parameter for surface roughness, and means the average height of the protruding peak after expressing the height of the total surface roughness in a graph,
• the initial Spk is Spk for the polishing surface before the polishing process, and
• Spk after polishing is Spk for the polishing surface after attaching a 300 mm diameter silicon wafer on which silicon oxide is deposited to a surface plate, maintaining a polishing load of 4.0 psi and a rotational speed of the polishing pad of 150 rpm, injecting the calcined ceria slurry at a rate of 250 ml/min, and performing the polishing process for 60 seconds.