Variable radio frequency micro-electromechanical switch

A method for manufacturing a switch comprising the following steps:

• a) depositing, on a planar face of at least one of a semiconductor and an insulating substrate, a first sacrificial layer and producing a pattern by at least one of life-off and etching of a portion of the first sacrificial layer;
• b) depositing, on the first sacrificial layer and on the planar face of the substrate (21), at least a first layer of metal;
• then producing a pattern by at least one of lift-off and etching a portion of the first layer of metal, to form a first RF line and the a first MEMS membrane;
• c) depositing, on the first RF line, a second sacrificial layer;
• then producing a pattern by at least one of lift-off and etching a part of the second sacrificial layer;
• d) depositing, on the second sacrificial layer, a dielectric layer;
• then producing a pattern by at least one of lift-off and etching a portion of the dielectric layer, to form the dome having an inner face across from the planar face of the substrate, an outer face opposite the inner face, as well as at least one openings in the dome;
• e) eliminating the first and second sacrificial layers through the at least one opening;
• then
• f) depositing, on the outer face of the dome and on the planar face of the substrate, at least one second metal layer;
• then producing a pattern making it possible to plug the at least one opening, and forming a second RF line by at least one of lift-off and etching of a portion of the second metal layer.

A method for manufacturing a switch comprising:

• a) depositing, on a planar face of a substrate, a first sacrificial layer and producing a first pattern by at least one of lift-off and etching of a portion of the first sacrificial layer;
• b) depositing, on the first sacrificial layer and on the planar face, at least a first layer of metal;
• then producing a second pattern by at least one of lift-off and etching a portion of the first layer of metal to form a first RF line and a first MEMS membrane;
• c) depositing, on the first RF line, a second sacrificial layer;
• then producing a third pattern by at least one of lift-off and etching a part of the second sacrificial layer;
• d) depositing, on the second sacrificial layer, a dielectric layer;
• then producing a fourth pattern by at least one of lift-off and etching a portion of the dielectric layer, to form the dome having an inner face across from the planar face, an outer face opposite the inner face, as well as at least one opening in the dome;
• e) eliminating the first and second sacrificial layers through the at least one opening in the dome;
• then
• f) depositing, on the outer face of the dome and on the planar face, at least one second metal layer;
• then producing a fifth pattern to plug the at least one opening and forming a second RF line by at least one of lift-off and etching of a portion of the second metal layer.