Back to results
US 2022/0190826 A1Published application
Rf switch stack with charge redistribution
AssigneepSemi Corporation
InventorSimon Edward WILLARD
Life of this patent
Estimating the term…
Abstract
Methods and devices to address body leakage current generation and bias voltage distribution associated with body leakage current in an OFF state of a FET switch stack are disclosed. The devices include charge redistribution arrangements and bridge networks to perform coupling/decoupling to/from the FET switch stack. Detailed structures of such bridge networks are also described.
Claims16
-16. (canceled)
A field effect transistor (FET) switch stack circuit comprising:
- i) a stacked configuration of series-connected FET transistors;
- ii) a drain/source charge redistribution resistive ladder comprising series-connected drain/source charge redistribution resistors and a set of one or more drain/source tapping points in correspondence with drains or sources of FET transistors of the series-connected FET transistors;
- iii) a body charge redistribution resistive ladder comprising series-connected body charge redistribution resistors and a set of one or more body tapping points in correspondence with bodies of FET transistors of the series-connected FET transistors;
- and
- iv) a drain-body bridge network configured to selectively couple/decouple the set of one or more drain/source tapping points with/from the set of one or more body tapping points, thus selectively coupling/decoupling drains or sources of the FET transistors with/from bodies of the FET transistors to redistribute charges throughout the FET transistors.
2 more elements
A radio frequency (RF) switch stack circuit comprising:
- a stack of FET transistors connected in a series configuration and configured to be coupled to an antenna to receive an RF signal;
- a body resistive ladder comprising body resistors coupled to bodies of FET transistors of the stack of FET transistors;
- a drain-source resistive ladder comprising drain-source resistors coupled to drain/sources of FET transistors of the stack of FET transistors;
- a charge redistribution resistive ladder comprising charge transfer resistors and at least one tapping point;
- and
- a bridge network configured to selectively couple/decouple the at least one tapping point of the charge redistribution resistive ladder with/from the drain-sources and/or bodies of the transistors of the stack of transistors during a portion of a period of the RF signal in order to selectively source current from the charge redistribution resistive ladder and deliver said current to the drain-source resistive ladder and/or sink current from the body resistive ladder and deliver said current to the charge redistribution resistive ladder.
3 more elements
-33. (canceled)
Dependencies are inferred from the claim text.