Hybrid power amplifier with gan-on-si and gan-on-sic circuits
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorPrity Kirit Patel
Life of this patent
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Abstract
A power amplifier, such as a radio-frequency (RF) Doherty power amplifier, for amplifying an input signal to an output signal is disclosed. The power amplifier includes a peaking amplifier circuit, where the peaking amplifier circuit is formed in gallium nitride materials on a silicon substrate. The power amplifier further includes a main amplifier circuit, where the main amplifier circuit is formed in gallium nitride materials on a silicon carbide substrate.
Claims20
A power amplifier for amplifying an input signal to an output signal, comprising:
- a peaking amplifier circuit, wherein the peaking amplifier circuit is formed in gallium nitride materials on a silicon substrate;
- and
- a main amplifier circuit, wherein the main amplifier circuit is formed in gallium nitride materials on a silicon carbide substrate.
A Doherty power amplifier configured to amplify an input signal to an output signal, comprising:
- a peaking amplifier circuit, wherein the peaking amplifier circuit is formed in gallium nitride materials on a silicon substrate;
- and
- a main amplifier circuit, wherein the main amplifier circuit is formed in gallium nitride materials on a silicon carbide substrate.
A method for amplifying an input signal to an output signal, comprising:
- forming a peaking amplifier circuit in gallium nitride materials on a silicon substrate;
- forming a main amplifier circuit in gallium nitride materials on a silicon carbide substrate;
- and
- implementing the peaking amplifier circuit and the main amplifier circuit in a single package.
Dependencies are inferred from the claim text.