Compound semiconductor layer stack, method of forming the same, and light-emitting device
AssigneeSony Group Corporation
InventorsKUNIHIKO TASAI, HIROSHI NAKAJIMA, HIDEKAZU KAWANISHI, KATSUNORI YANASHIMA
Life of this patent
Estimating the term…
Abstract
A compound semiconductor layer stack includes: a first layer 11 being formed on a base 14 and including an island-shaped Alx1Iny1Ga(1-x1-y1)N; a second layer 12 being formed on the first layer 11 and including Alx2Iny2Ga(1-x2-y2)N; and a third layer 13 being formed on an entire surface including a top of the second layer 12, the third layer 13 including Alx3Ga(1-x3)N (provided that the following hold true: 0≤x1<1; 0≤x2<1; 0≤x3<1; 0≤y1<1; and 0<y2<1), and the third layer 13 has a top surface 13A that is flat.
Claims17
A method of forming a compound semiconductor layer stack, the method comprising:
- forming, on a base, a first layer including an island-shaped Alx1Iny1Ga(1-x1-y1)N;
- forming, on the first layer, a second layer including Alx2Iny2Ga(1-x2-y2)N;
- and
- forming, on an entire surface including a top of the second layer, a third layer including Alx3Ga(1-x3)N, the third layer having a top surface that is flat,
- provided that the following hold true:
- 0≤x1<1;
- 0≤x2<1;
- 0≤x3<1;
- 0≤y1<1;
- and 0<y2<1.
A compound semiconductor layer stack comprising:
- a first layer being formed on a base and including an island-shaped Alx1Iny1Ga(1-x1-y1)N;
- a second layer being formed on the first layer and including Alx2Iny2Ga(1-2x-y2)N;
- and
- a third layer being formed on an entire surface including a top of the second layer, the third layer including Alx3Ga(1-x3)N,
- the third layer having a top surface that is flat,
- provided that the following hold true:
- 0≤x1<1;
- 0≤x2<1;
- 0≤x3<1;
- 0≤y1<1;
- and 0<y2<1.
A light-emitting device comprising:
- a compound semiconductor layer stack formed on a base;
- a first compound semiconductor layer formed on the compound semiconductor layer stack;
- an active layer formed on the first compound semiconductor layer;
- a second compound semiconductor layer formed on the active layer;
- a second electrode electrically coupled to the second compound semiconductor layer;
- and
- a first electrode electrically coupled to the first compound semiconductor layer,
- the compound semiconductor layer stack including
- a first layer being formed on the base and including an island-shaped Alx1Iny1Ga(1-x1-y1)N,
- a second layer being formed on the first layer and including Alx2Iny2Ga(1-x2-y2)N, and
- a third layer being formed on an entire surface including a top of the second layer, the third layer including Alx3Ga(1-x3)N,
- the third layer having a top surface that is flat,
- provided that the following hold true:
- 0≤x1<1;
- 0≤x2<1;
- 0≤x3<1;
- 0≤y1<1;
- and 0<y2<1.
Dependencies are inferred from the claim text.