Display device and method for manufacturing same

A method for manufacturing a display device, the method comprising:

• a thin film transistor layer forming step of forming a thin film transistor layer including a first inorganic insulating film on a resin substrate;
• a light-emitting element layer forming step of forming a light-emitting element layer on the thin film transistor layer, the light-emitting element layer including a plurality of light-emitting elements arranged corresponding to a plurality of subpixels constituting a display region;
• and
• a sealing film forming step of forming a sealing film including a second inorganic insulating film on the light-emitting element layer to cover the light-emitting elements,
• wherein a frame region is provided around the display region,
• a non-display region is provided in an island shape inside the display region,
• a through hole penetrating in a thickness direction of the resin substrate in the non-display region,
• a first electrode, a functional layer, and a second electrode are sequentially layered in the light-emitting elements, and
• the functional layer includes a common functional layer provided in common to the plurality of subpixels,
• the thin film transistor layer forming step includes
• a semiconductor layer forming step of forming an oxide semiconductor layer in an island shape in the non-display region, and
• a first opening forming step of forming a first opening to expose the oxide semiconductor layer to the first inorganic insulating film in the non-display region,
• the light-emitting element layer forming step includes a functional layer forming step of forming the common functional layer to cover the oxide semiconductor layer exposed from the first opening and extend from the display region to the non-display region, and
• a functional layer removal step of removing the common functional layer of a portion covering the oxide semiconductor layer by irradiating the oxide semiconductor layer with laser light, and forming a second opening in the common functional layer to expose the oxide semiconductor layer, a peripheral end of the second opening being surrounded by a peripheral end of the first opening in a plan view,
• in the sealing film forming step, the second inorganic insulating film is formed to cover the oxide semiconductor layer exposed from the second opening, and
• the method comprises, after the sealing film forming step, a through hole forming step of forming the through hole in the non-display region to be surrounded by the peripheral end of the second opening in a plan view.