Image sensor and depth imaging system
AssigneeRockchip Electronics Co., Ltd.
InventorsHuabing XU, Qiang NI, Gang WANG, Chuyi CHEN, Fayao ZHENG, Da XU, Mingpei LIU
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AssigneeRockchip Electronics Co., Ltd.
InventorsHuabing XU, Qiang NI, Gang WANG, Chuyi CHEN, Fayao ZHENG, Da XU, Mingpei LIU
Estimating the term…
The present disclosure provides an image sensor, which may include a driving layer, a negative electrode layer formed in the driving layer, a N-region layer formed above the negative electrode layer. The N-region layer includes multiple cylindrical structures formed of semiconductor materials. The image sensor may also include a light absorption layer formed above the N-region layer. The light absorption layer is composed of a multi-layer structure including a P-region layer formed using quantum dot semiconductor materials. The image sensor may further include a positive electrode layer formed above the light absorption layer and configured to receive incoming light signals.
An image sensor, comprises:
A depth imaging system for capturing an imaging object, comprises:
Dependencies are inferred from the claim text.