Sputtering target including carbon-doped gst and method for fabricating electronic device using the same

A method for fabricating an electronic device including a semiconductor memory, the method comprising:

• forming a first electrode layer over a substrate;
• forming a phase change material layer including a carbon-doped GeSbTe alloy over the first electrode layer;
• and
• forming a second electrode layer over the phase change material layer,
• wherein the phase change material layer is formed by a sputtering process using a sputtering target, the sputtering target including the carbon-doped GeSbTe alloy, and
• wherein, for the carbon-doped GeSbTe alloy, an average grain diameter of a GeSbTe alloy after sintering is in a range of 0.5 μm to 5 μm, and a first ratio of an average grain diameter of carbon after the sintering to the average grain diameter of the GeSbTe alloy after the sintering is in a range of greater than 0.5 and equal to or less than 1.5.

A method for fabricating an electronic device including a semiconductor memory, the method comprising:

• forming a first electrode layer over a substrate;
• forming a phase change material layer including a carbon-doped GeSbTe alloy over the first electrode layer;
• and
• forming a second electrode layer over the phase change material layer,
• wherein the phase change material layer is formed by a sputtering process using a sputtering target, the sputtering target including the carbon-doped GeSbTe alloy, and
• wherein, for the carbon-doped GeSbTe alloy, a condition of Y=X×(Z/100) is satisfied,
• where an average grain diameter of a GeSbTe alloy after sintering is X (μm), an average grain diameter of carbon after the sintering is Y (μm), and a content of carbon is Z (at %).

A method for fabricating an electronic device including a semiconductor memory, the method comprising:

• forming a plurality of first lines over a substrate, each first line extending in a first direction;
• forming a plurality of memory cells over the first lines;
• and
• forming a plurality of second lines over the memory cells, each second line extending in a second direction that crosses the first direction, the first and second directions being perpendicular to a top surface of the substrate,
• wherein the memory cells are disposed at respective intersections of the plurality of first lines and the plurality of second lines, and each of the memory cells includes a variable resistance layer switching between different resistance states according to an applied voltage or current, and a selection element layer controlling access to the variable resistance layer,
• wherein forming the plurality of memory cells includes forming the variable resistance layer by a sputtering process using a sputtering target, the sputtering target including a carbon-doped GeSbTe alloy, and
• wherein an average grain diameter of a GeSbTe alloy after sintering is in a range of 0.5 μm to 5 μm, and a first ratio of an average grain diameter of carbon after the sintering to the average grain diameter of the GeSbTe alloy after the sintering is in a range of greater than 0.5 and equal to or less than 1.5.

A method for fabricating an electronic device including a semiconductor memory, the method comprising:

• forming a plurality of first lines over a substrate, each first line extending in a first direction;
• forming a plurality of memory cells over the first lines;
• and
• forming a plurality of second lines over the memory cells, each second line extending in a second direction that crosses the first direction, the first and second directions being perpendicular to a top surface of the substrate,
• wherein the memory cells are disposed at respective intersections of the plurality of first lines and the plurality of second lines, and each of the memory cell includes a variable resistance layer switching between different resistance states according to an applied voltage or current, and a selection element layer controlling access to the variable resistance layer,
• wherein forming a plurality of memory cells includes forming the variable resistance layer by a sputtering process using a sputtering target, the sputtering target including a carbon-doped GeSbTe alloy, and
• wherein, for the carbon-doped GeSbTe alloy, a condition of Y=X×(Z/100) is satisfied,
• where an average grain diameter of a GeSbTe alloy after sintering is X (μm), an average grain diameter of carbon after the sintering is Y (μm), and a content of carbon is Z (at %).