Integrated circuit

An integrated circuit, comprising:

• a substrate;
• a memory device over the substrate, the memory device comprising:
• a bottom electrode via;
• a bottom electrode over the bottom electrode via;
• a resistance switching element over the bottom electrode;
• and
• a top electrode over the resistance switching element;
• and
• a resistor over the substrate, wherein the resistor comprises a plurality of resistor elements stacked over the substrate, a bottommost surface of the resistor is higher than a bottommost surface of the bottom electrode via, and a topmost surface of the resistor is lower than a topmost surface of the top electrode.

An integrated circuit, comprising:

• a first metallization layer;
• a second metallization layer;
• a memory device between the first and second metallization layers, the memory device comprising:
• a bottom electrode via in contact with a first one of a plurality of first conductive features of the first metallization layer;
• a bottom electrode over the bottom electrode via;
• a resistance switching element over the bottom electrode;
• and
• a top electrode over the resistance switching element, wherein the top electrode is in contact with a first one of a plurality of second conductive features of the second metallization layer;
• and
• a resistor between the first and second metallization layers.