Magnetization rotation element, magnetoresistance effect element, magnetic memory, and method of manufacturing spin-orbit torque wiring
AssigneeTDK Corporation
InventorsTomoyuki SASAKI, Yohei SHIOKAWA, Yugo ISHITANI, Kosuke HAMANAKA, Eiji KOMURA
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Abstract
The magnetization rotation element includes: a spin-orbit torque wiring; and a first ferromagnetic layer which is stacked on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a plurality of wiring layers, and wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.
Claims20
A magnetization rotation element comprising:
- a spin-orbit torque wiring;
- and
- a first ferromagnetic layer which is stacked on the spin-orbit torque wiring,
- wherein the spin-orbit torque wiring includes a plurality of wiring layers, and
- wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.
A method of manufacturing a spin-orbit torque wiring comprising:
- a first film forming step of DC sputtering a metal at the same time as or after RF sputtering of an oxide to form an oxide layer having a pyrochlore structure.
Dependencies are inferred from the claim text.