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US 2022/0190229 A1Published application
Area-selective deposition of metal nitride to fabricate devices
AssigneeInternational Business Machines Corporation
InventorsRudy J. Wojtecki, Damon Brooks Farmer, Charles Thomas Rettner, Noel Arellano, Alexander Friz, Matthew W. Copel
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Abstract
Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.
Claims20
A method, comprising:
- providing a thermally treated carbon layer;
- selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.
A method, comprising:
- annealing a pattern of carbonaceous sections present in a layer of carbon at a temperature within a range from about 500° C. to about 1000° C.;
- and
- selectively depositing a metal nitride using the annealed pattern to form a superconducting device.
A method, comprising:
- forming a first electrode by selectively depositing a metal nitride using a thermally treated carbon layer;
- forming an insulator layer using the thermally treated carbon layer, the insulator layer forming a first interface with the first electrode;
- and
- forming a second electrode by selectively depositing the metal nitride using the thermally treated carbon layer, the second electrode forming a second interface with the insulator layer.
1 more element
Dependencies are inferred from the claim text.