Optoelectronic semiconductor device comprising a dielectric layer and a transparent conductive layer and method for manufacturing the optoelectronic semiconductor device

A method for manufacturing an optoelectronic semiconductor device, comprising:

• forming a semiconductor layer stack comprising a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type;
• roughening a first main surface of the first semiconductor layer;
• forming a dielectric layer over the first main surface;
• planarizing a surface of the dielectric layer;
• and
• forming a transparent conductive layer over the dielectric layer, such that the transparent conductive layer covers the surface of the dielectric layer.

An optoelectronic semiconductor device, comprising:

• a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type;
• wherein the first and second semiconductor layers are stacked one on top of the other to form a layer stack;
• further comprising a first current spreading structure connected to the first semiconductor layer and is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer;
• and
• further comprising a passivation layer on a side of the first semiconductor layer facing away from the second semiconductor layer, wherein the passivation layer is arranged between regions of the first current spreading structure, and wherein the passivation layer and the regions of the first current spreading layer form a planar surface.