Semiconductor light-emitting device including a reflector layer having a multi-layered structure

A semiconductor light-emitting device, comprising:

• a growth substrate;
• a light-emitting structure including;
• a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked on the growth substrate,
• first regions exposing the first semiconductor layer, and
• a second region thicker than the first regions;
• a transparent electrode layer on the second region, the transparent electrode layer being in contact with the second semiconductor layer;
• a first insulating layer on the first and second regions, the first insulating layer having first openings exposing the first semiconductor layer and second openings exposing the transparent electrode layer;
• a reflective metal layer in contact with the first semiconductor layer exposed through the first openings;
• and
• a sub-electrode layer on the first insulating layer on the second region, the sub-electrode layer being in contact with the transparent electrode layer exposed through the second openings,
• wherein a first width of each of the first openings is greater than a second width of each of the second openings, and
• wherein a first distance between the first openings closest to each other is greater than a second distance between the second openings closest to each other.

A semiconductor light-emitting device, comprising:

• a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked;
• a first insulating layer on the second semiconductor layer, the first insulating layer including:
• a plurality of first openings having first widths, and
• a plurality of second openings having second widths different from the first width;
• a first electrode electrically connected to the first semiconductor layer through the first openings;
• a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings;
• and
• a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings,
• wherein a first distance between first openings directly adjacent to each other is different from a second distance between second openings directly adjacent to each other.