Light-emitting element and method for manufacturing the same
AssigneeToyoda Gosei Co., Ltd.
InventorsKengo NAGATA, Yoshiki SAITO, Keita KATAOKA, Tetsuo NARITA, Kayo KONDO
Life of this patent
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Abstract
A light-emitting element includes an n-type contact layer which includes AlGaN and in which a Fermi level and a conduction band are in degeneracy, and a light-emitting layer including AlGaN and being stacked on the n-type contact layer. An Al composition x of the n-type contact layer is not less than 0.1 greater than an Al composition x of the light-emitting layer. The n-type contact layer has an effective donor concentration that is a concentration to cause the degeneracy and that is not more than 4.0×1019 cm−3.
Claims7
A light-emitting element, comprising:
- an n-type contact layer which comprises AlGaN and in which a Fermi level and a conduction band are in degeneracy;
- and
- a light-emitting layer comprising AlGaN and being stacked on the n-type contact layer,
- wherein an Al composition x of the n-type contact layer is not less than 0.1 greater than an Al composition x of the light-emitting layer, and
- wherein the n-type contact layer has an effective donor concentration that is a concentration to cause the degeneracy and that is not more than 4.0×1019 cm−3.
A method for manufacturing a light-emitting element, comprising:
- by a vapor-phase growth method, forming an n-type contact layer which comprises AlGaN and in which a Fermi level and a conduction band are in degeneracy;
- and
- forming a light-emitting layer comprising AlGaN on the n-type contact layer,
- wherein an Al composition x of the n-type contact layer is not less than 0.1 greater than an Al composition x of the light-emitting layer,
- wherein the n-type contact layer has an effective donor concentration that is a concentration to cause the degeneracy and that is not more than 4.0×1019 cm−3, and
- wherein a V/III ratio of a source gas of the n-type contact layer in the forming the n-type contact layer is within a range of not less than 1000 and not more than 3200.
Dependencies are inferred from the claim text.