Semiconductor light emitting device and light emitting device package including the same

A light emitting device package comprising:

• a package substrate including a wiring layer provided on an upper surface of the package substrate;
• a semiconductor light emitting device provided on the package substrate;
• a wavelength conversion portion provided on the semiconductor light emitting device;
• and
• a reflective resin portion provided on the package substrate adjacent the semiconductor light emitting device and the wavelength conversion portion,
• wherein the semiconductor light emitting device comprises:
• a substrate structure;
• a light emitting structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially provided on the substrate structure, wherein a hole penetrates through the first conductivity-type semiconductor layer and the active layer to expose the second conductivity-type semiconductor layer, and uneven portions are provided on a surface of the second conductivity-type semiconductor layer;
• a dam structure provided adjacent a portion of the light emitting structure on the substrate structure;
• a first electrode provided between the substrate structure and the light emitting structure, and connected to the first conductivity-type semiconductor layer;
• and
• a second electrode provided in the hole between the substrate structure and the light emitting structure and connected to the second conductivity-type semiconductor layer, and
• wherein an external side surface of the dam structure is in contact with the reflective resin portion.

A light emitting device package comprising:

• a package substrate;
• a semiconductor light emitting device provided on the package substrate;
• a wavelength conversion portion provided on the semiconductor light emitting device;
• and
• a reflective resin portion provided on the package substrate adjacent the semiconductor light emitting device and the wavelength conversion portion,
• wherein the semiconductor light emitting device comprises:
• a light emitting structure comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer provided between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
• a dam structure provided adjacent a portion of the light emitting structure;
• a first electrode connected to the first conductivity-type semiconductor layer;
• and
• a second electrode connected to the second conductivity-type semiconductor layer, and
• wherein the dam structure is provided between the light emitting structure and the reflective resin portion.