Point source type light-emitting diode and manufacturing method thereof

A manufacturing method of a point source type light-emitting diode comprising:

• a first step for forming a semiconductor laminate including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially on a growth substrate;
• a second step for forming a current narrowing layer on the p-type semiconductor layer;
• a third step for forming a metal reflective layer on the current narrowing layer;
• a fourth step for forming a metal layer, while a support substrate having a metal bonding layer on a surface is bonded to the metal reflective layer via the metal bonding layer;
• a fifth step for removing the growth substrate;
• and
• a sixth step for forming a top electrode on a growth substrate removed surface of the n-type semiconductor layer, the top electrode having an opening for ejecting light emitted by the active layer, wherein
• in the third step, the current narrowing layer including a dielectric layer having a through hole and an intermediate electrode provided in the through hole to electrically connect between the p-type semiconductor layer and the metal layer is formed,
• in a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode, and
• a thickness of the p-type semiconductor layer is 0.5 μm or more and 3.3 μm or less.