Positive-intrinsic-negative (pin) photosensitive device, manufacturing method thereof, and display panel

A method for manufacturing a positive-intrinsic-negative (PIN) photosensitive device, comprising steps of:

• forming a patterned lower electrode on a substrate;
• forming a first insulation layer to cover the substrate and the lower electrode, and perforating the first insulation layer corresponding to a part of the lower electrode to form a first via;
• forming a patterned n-type semiconductor layer and an intrinsic semiconductor layer on the lower electrode in order in an area corresponding to the first via;
• forming a passivation layer to cover at least the intrinsic semiconductor layer, and perforating the passivation layer corresponding to the intrinsic semiconductor layer to form a second via;
• forming a patterned p-type semiconductor layer on the intrinsic semiconductor layer in an area corresponding to the second via;
• and
• forming a patterned upper electrode to cover the p-type semiconductor layer, wherein valence band energy of the p-type semiconductor layer is between valence band energy of the intrinsic semiconductor layer and the upper electrode.